Resistor random access memory cell with reduced active area and reduced contact areas

Abstract

A memory device has a sidewall insulating member with a sidewall insulating member length according to a first spacer layer thickness. A first electrode formed from a second spacer layer having a first electrode length according to a thickness of a second spacer layer and a second electrode formed from the second spacer layer having a second electrode length according to the thickness of the second spacer layer are formed on sidewalls of the sidewall insulating member. A bridge of memory material having a bridge width extends from a top surface of the first electrode to a top surface of the second electrode across a top surface of the sidewall insulating member, wherein the bridge comprises memory material.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS[0001]This application is a divisional application of co-pending U.S. patent application Ser. No. 11 / 421,042 filed on 30 May 2006, which application is related to our co-pending U.S. application Ser. No. 11 / 421,036 filed on 3 May 2006 (now U.S. Pat. No. 7,732,800), owned by the same assignee (MXIC 1698-1).BACKGROUND OF THE INVENTION[0002]1. Field of the Invention[0003]The present invention relates to high density memory devices based on phase change based memory materials, including chalcogenide based materials and on other programmable resistive materials, and to methods for manufacturing such devices.[0004]2. Description of Related Art[0005]Phase change based memory materials are widely used in read-write optical disks. These materials have at least two solid phases, including for example a generally amorphous solid phase and a generally crystalline solid phase. Laser pulses are used in read-write optical disks to switch between phases and to...

AI Technical Summary

Benefits of technology

[0012]The active volume of memory material subject of programmable resistance can be very small. For the purpose of this disclosure, when referring to the dimensions of the structures in the cell, the “length” refers to the distance in the x-direction (left to right in FIG. 1), which for the sidewall insulating member and the sidewall electrodes, is determined by the thicknesses of the spacer layers used to form the sidewalls. The “thickness” of a structure in the cell refers to distance in the y-direction (up and down in FIG. 1), and the “width” refers to distance in the z-direction (perpendicular to the plane of the drawing in FIG. 1). Thus the active volume of memory material is determined by the length of the sidewall insulating member (x-direction), the thickness of the thin film used to form the bridge (y-direction), the width of the bridge orthogonal to the conductive path length (z-direction), and the length of the side wall electrode structures (x-direction) acting as contacts to the bridge. The small contact areas, defined by the lengths of the first and second electrodes and the width of the bridge, improve thermal isolation of the bridge by reducing the area of contact to the electrode material which has relatively high thermal conductivity. The small contact areas also serve to concentrate current flow, increasing current density in the bridge. The improved thermal isolation and increased current density improve reset operation of the cell, particularly for cells comprising bridges of phase change material.

Problems solved by technology

Problems have arisen in manufacturing such devices with very small dimensions, and with variations in process that meet tight specifications needed for large-scale memory devices.

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