Growth of Single Crystal Nanowires
a single crystal, nanowire technology, applied in the field of nanostructured materials, can solve the problems that known methods, however, are not necessarily commercially attractiv
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[0062]In EXAMPLE 1 below, nanowires were produced in accordance with the present disclosure using a continuous flow reactor. As a comparative example, nanowires were also produced using a batch process. The results demonstrate that the continuous process unexpectedly produces superior nanowires. In EXAMPLE 2 below, surface functionalized nanowires were produced in accordance with the present disclosure using a semi-batch process. In EXAMPLE 3, Ge nanowires were produced using a continuous flow reactor in accordance with the present disclosure. EXAMPLE 3 is similar to Example 1, but the metal nanocrystals that direct nanowire growth are dispersed freely in solution rather than tethered to a substrate as in EXAMPLE 1. In EXAMPLE 4 below, Ge nanowires were produced with simultaneous in situ passivation in accordance with the present disclosure. This example is similar to EXAMPLE 3 except a surface passivating agent was added to the reaction solution containing the Ge precursor and the ...
example 1
Comparison of Continuous and Batch Production
A. Experimental
[0063]Si Substrate Preparation. A Si wafer (, with thermal oxide 10 nm, Wafer World, Inc.) was cut into 5.times.20 mm samples that were degreased with distilled deionized water (D—H2O) and acetone in an ultra-sonic bath. These small Si substrates were immersed in a HCl / methanol (w / w=1:1) solution and then 98% H2SO4, each for 30 min. After rinsing with D—H2O and drying with N2, the substrates were immersed for 1 h in a dilute aqueous solution of 1:1:40 (v / v / v) 3-mercaptopropyltrimethoxysilane, MPTMS (Gelest, Inc.) / D-H2O / isopropyl alcohol to functionalize the surface. The MPTMS-treated Si substrate was transferred to a colloidal dispersion of alkanethiol-coated Au nanocrystals in chloroform. The Au nanocrystals were synthesize according to the procedures described in the literature (see references 22 and 23). This procedure was:
[0064]Dissolved 0.154 g HAuCl4 in 15 mL D-H2O and 1.114 g (C8H17)4-NBr in 10.2 mL CHCl3. Combined t...
example 2
Surface Derivatization of Ge Nanowires
[0076]A Cl-terminated Ge nanowire sample was prepared. For background, see, for example, Lu, Z. H., “Air-stable Cl-terminated Ge (111)” Appl. Phys. Lett., 1996. 68(4): p. 520. Briefly, the oxide on the Ge nanowires surface was removed with an HF etch (2%, 4 min) followed by a treatment in diluted HCl (10%, 10 min). The nanowire sample was dispersed in ethanol and transferred to a new Si substrate for subsequent XPS analysis. A sulfide surface passivation was carried out. See, for example, Lyman et al., “Structure of a passivated Ge surface prepared from aqueous solution,” Surface Science, 2000. 462: p. L594., wherein a HF etched nanowire sample was treated in an aqueous (NH4)2S solution at 80° C. for 20 minutes followed by several rinses in ethanol. Nanowire surface hydrogermylation was performed. For background, see Choi, K. and J. M. Buriak, “Hydrogermylation of alkenes and alkynes on hydride terminated Ge (100) surfaces,” Langmuir, 2000. 16: ...
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