Semiconductor device with carbon atoms implanted under gate structure

Abstract

An exemplary semiconductor device includes a substrate, a spacer, a metal silicide layer and carbon atoms. The substrate has a gate structure formed thereon. The spacer is formed on the sidewall of the gate structure. The spacer has a first side adjacent to the gate structure and a second side away from the gate structure. The metal silicide layer is formed on the substrate and adjacent to the second side of the spacer but away from the first side of the spacer. The carbon atoms are formed into the substrate and adjacent to the first side of the spacer but away from the second side of the spacer.

Description

CROSS-REFERENCE TO RELATED APPLICATION[0001]This application is a Continuation application of U.S. application Ser. No. 11 / 620,970, entitled “METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE”, by TING et al., filed on Jan. 8, 2007, from which priority under 35 U.S.C. sctn. 121 is claimed and the contents of which are fully incorporated herein by reference.BACKGROUND OF THE INVENTION[0002]1. Field of Invention[0003]The present invention relates to a method for manufacturing a semiconductor device. More particularly, the present invention relates to a method for manufacturing a semiconductor device capable of solving junction leakage problem.[0004]2. Description of Related Art[0005]With the decreasing of the size of the integrated circuit and the increasing of the integration of the integrated circuit, the line width, junction area and junction depth are decreased. To effectively increase the functionalities of the device and to decrease the resistance and signal transmission delay due t...

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Benefits of technology

[0008]Accordingly, at least one objective of the present invention is to provide a method for manufacturing a semiconductor device capable of improving the junction leakage phenomenon.

[0009]At least another objective of the present invention is to provide a method for manufacturing a semiconductor device capable of increasing the efficiency of the semiconductor device.

[0026]In the present invention, the carbon atoms are implanted into the substrate so that the junction leakage problem caused by the pre-amorphous implantation can be avoided. Therefore, the efficiency of the semiconductor device can be improved. Furthermore, the more thermal budgets the boding between the carbon and the silicon of the substrate can bear, the more opportunities for entering the interstitial positions the carbon atoms can get. Hence, the boundary defect can be effectively improved.

[0027]Moreover, since the carbon atoms are implanted into the substrate, the problem of the lateral diffusion and the vertical diffusion of the nickel silicide can be overcome by utilizing the bonding between the carbon atom and the silicon atom of the substrate even without performing the pre-amorphous implantation process. Accordingly, the process procedure can be simplified.

Problems solved by technology

However, nickel silicide possesses piping and spiking problems.

That is, after the nickel silicide is formed, the nickel silicide diffuses into the substrate and the channel regions and the diffusion of the nickel silicide leads to current leakage.

Nevertheless, during the pre-amorphous implantation is performed, the end-of-range defect leads to a lot of defects generating at the surface of the source / drain region.

Therefore, the junction leakage seriously happens at the source / drain region.

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