Systems and methods for storing, retrieving, and adjusting read thresholds in flash memory storage system

US20120008414A1Inactive Publication Date: 2012-01-12AVAGO TECH WIRELESS IP SINGAPORE PTE

Patent Information

Authority / Receiving Office
US · United States
Current Assignee / Owner
AVAGO TECH WIRELESS IP SINGAPORE PTE
Publication Date
2012-01-12
Estimated Expiration
Not applicable · inactive patent

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

A method, system and computer-readable medium are provided for reading information from a memory unit. A read instruction may be received to read information from a set of memory cells in the memory unit. A data structure storing sets of read thresholds may be searched for a set of read thresholds based on one or more characteristic value(s) of the set of memory cells. If the set of read thresholds is found, the set of memory cells may be read to execute the read instruction using the found set of read thresholds. The set of read thresholds may be thresholds which were previously used to successfully read a set of cells having the same or similar characteristic value(s).
Need to check novelty before this filing date? Find Prior Art

Description

REFERENCE TO RELATED APPLICATIONS

[0001] This patent application claims priority from U.S. provisional patent application Ser. No. 61 / 361,626 filed Jul. 6, 2010, which is incorporated herein by reference in its entirety.BACKGROUND OF THE INVENTION

[0002] Flash memory devices may store information in the form of an electrical charge which may be programmed into cells by injecting electrons between electrically isolated floating-gates of the cells, where the electrons may be trapped by the insulating properties of the floating-gates. In single-level cell (SLC) devices, each cell may either be programmed with charge or may remain un-programmed (erased), thus effectively defining two binary states to store one bit of information per cell. Multi level cell (MLC) devices may store more than one bit per cell by applying electrical charge to the floating gates in one of multiple (n) levels. Thus, an (n)-level flash cell, where n=2̂k, may store k bits of information, where each combination of k ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More