Internal write adjust for a memory device

Abstract

Methods and systems for internal timing schemes are provided. A data strobe (DQS) signal is received at a memory device. The DQS signal is shifted in a negative direction relative to a clock of the memory device to cause a fail point of a flip flop of the memory device. After causing the fail point, the DQS signal is shifted in a positive direction relative to the clock. A transition edge of an internal write signal (IWS) is centered in a DQS period, such as a write preamble. The IWS indicates that a write command is to be captured. Moreover, centering the transition edge includes selectively delaying the IWS in the negative direction.

Description

BACKGROUNDField of the Present Disclosure[0001]Embodiments of the present disclosure relate generally to the field of semiconductor devices. More specifically, embodiments of the present disclosure relate to synchronizing write timings.Description of Related Art[0002]Semiconductor devices (e.g., memory devices) utilize timing with phase shifts of data signals, data strobes, and / or other signals to perform operations. However, separate signals and / or strobes may vary with relation to each other reducing performance of the semiconductor device without some accounting for such variation. As frequencies of the signals increase, these timings may become tighter and more difficult to synchronize together.[0003]Embodiments of the present disclosure may be directed to one or more of the problems set forth above.BRIEF DESCRIPTION OF DRAWINGS[0004]FIG. 1 is a simplified block diagram illustrating certain features of a memory device, according to an embodiment of the present disclosure;[0005]F...

AI Technical Summary

Benefits of technology

The present disclosure relates to synchronizing write timings in semiconductor devices, particularly in memory devices such asDDR5 SDRAM. The problem addressed by the patent is that separate signals and strobes may vary with relation to each other, reducing the effectiveness of synchronization. The patent describes various methods for calibrating and compensating for this variation, including shifting the internal write signal and data strobe to align with the internal clock, and using a write leveling circuit to resolve potential fluctuations and ambiguities. The technical effects of the patent include improved synchronization and reduced power consumption in memory devices.

Problems solved by technology

However, separate signals and / or strobes may vary with relation to each other reducing performance of the semiconductor device without some accounting for such variation.

As frequencies of the signals increase, these timings may become tighter and more difficult to synchronize together.

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