Acoustic wave resonator RF filter circuit device

Abstract

An RF circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include a plurality of resonator devices and a plurality of resonator devices. In the ladder topology, the resonator devices are connected in series from an input port to an output port while shunt resonator devices are coupled the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a pair of resonator devices that are coupled to differential input and output ports. A pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. These topologies may be applied using single crystal or polycrystalline bulk acoustic wave (BAW) resonators.

Description

CROSS-REFERENCES TO RELATED APPLICATIONS[0001]The present application claims priority to and is a continuation in part application of U.S. patent application Ser. No. 16 / 828,675, filed Mar. 24, 2020, which is a continuation in part application of U.S. patent application Ser. No. 16 / 707,885 filed Dec. 9, 2019, which is a continuation in part application of U.S. patent application Ser. No. 16 / 290,703 filed Mar. 1, 2019, now U.S. Pat. No. 10,979,026, which is a continuation in part application of U.S. patent application Ser. No. 16 / 175,650 filed Oct. 30, 2018, now U.S. Pat. No. 10,979,025, which is a continuation in part application of U.S. patent application Ser. No. 16 / 019,267 filed Jun. 26, 2018, now U.S. Pat. No. 10,979,022, which is a continuation in part application of U.S. patent application Ser. No. 15 / 784,919 filed Oct. 16, 2017, now U.S. Pat. No. 10,355,659, which is a continuation in part application of U.S. patent application Ser. No. 15 / 068,510 filed Mar. 11, 2016, now U.S...

AI Technical Summary

Benefits of technology

The present device is a new type of RF resonator filter that is small, powerful, and has low signal loss. It can be made using common materials and methods, and is useful in making RF filter devices and systems. Overall, this device offers better performance than previous techniques.

Problems solved by technology

Coexistence of new and legacy standards and thirst for higher data rate requirements is driving RF complexity in smartphones.

Unfortunately, limitations exist with conventional RF technology that is problematic, and may lead to drawbacks in the future.

Even so, there are challenges to using and transferring single crystal piezoelectric thin films in the manufacture of BAWR and BAW filters.

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