Magnetic random access memory

Abstract

In a magnetic random access memory (MRAM), setting data which determines the supply / cutoff timing, magnitude, and temporal change (current waveform) of a write word / bit line current is registered in a setting circuit. A write current waveform control circuit generates a write word line drive signal, write word line sink signal, write bit line drive signal, and write bit line sink signal on the basis of the setting data. The current waveform of the write word / bit line current is controlled for each chip or memory cell array.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS[0001]This application is based upon and claims the benefit of priority from the prior Japanese Patent Application No. 2002-140499, filed May 15, 2002, the entire contents of which are incorporated herein by reference.BACKGROUND OF THE INVENTION[0002]1. Field of the Invention[0003]The present invention relates to a magnetic random access memory (MRAM) which stores “1”- and “0”-information using a tunneling magnetoresistive effect.[0004]2. Description of the Related Art[0005]In recent years, many memories which store information by new principles have been proposed. One of them is a memory using the tunneling magnetoresistive (to be referred to as TMR hereinafter) effect proposed by Roy Scheuerlein et al. (e.g., “A 10 ns Read and Write Non-Volatile Memory Array Using a Magnetic Tunnel Junction and FET Switch in each Cell”, ISSCC2000 Technical Digest, p. 128).[0006]A magnetic random access memory stores “1”- and “0”-information using MTJ (Magneti...

AI Technical Summary

Benefits of technology

This approach enhances the write characteristics by reliably inverting the magnetization of the storing layer, improving data stability and maintaining a high MR ratio, thus ensuring accurate and reproducible data storage.

Problems solved by technology

In this case, it may be impossible to sufficiently invert the magnetization of the storing layer of the MTJ element.

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