Unlock instant, AI-driven research and patent intelligence for your innovation.

Memory system and method of writing into nonvolatile semiconductor memory

a memory and semiconductor technology, applied in the field of memory system and a method of writing into a memory, can solve the problems of affecting the reconstruction of an original block, slow data write or rewrite speed, and inability to update the data of each page in the same amount of tim

Active Publication Date: 2011-01-18
KIOXIA CORP
View PDF18 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

This approach minimizes the number of read / write cycles needed for block reconstruction, reducing the time required for data updates and preventing prolonged busy signal outputs, thus enhancing write speed and reliability.

Problems solved by technology

As a result, a considerable time may be required to update the data of each page.
For this reason, in the memory card using both the flash memory and the FAT file system, the data write or rewrite speed may be slow.
However, the reconstruction of an original block poses the problem described below.
If the busy signal is output for longer than the period of time set in the host device, the host device may determine that the memory card is in trouble.
This problem becomes more conspicuous with the increase in page capacity due to the technological progress.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Memory system and method of writing into nonvolatile semiconductor memory
  • Memory system and method of writing into nonvolatile semiconductor memory
  • Memory system and method of writing into nonvolatile semiconductor memory

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0030]An embodiment of the invention will be explained below with reference to the drawings. In the following description, the components having substantially the same function and configuration are designated by the same reference numerals, respectively, and explained again only when necessary.

[0031]A memory system according to an embodiment of the invention will be explained below taking a memory card as an example.

[0032]FIG. 1 is a schematic diagram showing a configuration of a memory card according to an embodiment of the invention. The memory card 1 transmits and receives information to and from a host device 2 through a bus interface 14. The memory card 1 includes a NAND type flash memory (hereinafter referred to simply as a flash memory) chip 11, a card controller 12 for controlling the flash memory chip 11, and a plurality of signal pins (first to ninth pins) 13.

[0033]The signal pins 13 are electrically connected to the card controller 12. The first to ninth pins of the pins...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A memory system includes a nonvolatile semiconductor memory which includes a first original block composed of n (n being natural number) write unit areas and a first subblock composed of a plurality of write unit areas. A controller writes data having one of first to p-th (p being natural number smaller than n) addresses into the first original block. The controller writes data which has a first write address of one of the first to p-th addresses into the first subblock when the controller receives request to write data having the first write address and data having the first write address exists in the first original block.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS[0001]This is a Continuation Application of PCT Application No. PCT / JP2006 / 319828, filed Sep. 27, 2006, which was published under PCT Article 21(2) in English.[0002]This application is based upon and claims the benefit of priority from prior Japanese Patent Application No. 2005-283388, filed Sep. 29, 2005, the entire contents of which are incorporated herein by reference.BACKGROUND OF THE INVENTION[0003]1. Field of the Invention[0004]The present invention relates to a memory system and a method of writing into a memory using a card controller, for example.[0005]2. Description of the Related Art[0006]A memory card having a nonvolatile semiconductor memory such as a flash memory is used as a medium for recording music data or video data. A typical example of a flash memory for use in a memory card includes a NAND type flash memory.[0007]Data in a memory is managed in accordance with a write request from an application, etc., by a file system in a...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(United States)
IPC IPC(8): G11C11/34
CPCG06F12/0246G11C16/00
Inventor SUDA, TAKAYA
Owner KIOXIA CORP