Apparatus for determining number of bits to be stored in memory cell
a technology of memory cell and apparatus, applied in the field of memory apparatus storing data, can solve the problems of deterioration of reliability, decrease of threshold voltage between adjacent bits, increase in read-failure rate,
Inactive Publication Date: 2012-09-25
SAMSUNG ELECTRONICS CO LTD
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Benefits of technology
Example embodiments provide a memory data storage apparatus and method that can determine the number of bits of data to be stored in a memory cell based on the threshold error rate of the data. The apparatus can also compare the bit error rate of the stored data with the threshold error rate and redetermine the number of bits of data detection information based on the result of the comparing. This allows for efficient data storage and retrieval with reduced errors.
Problems solved by technology
However, as the number of bits stored in the single memory cell increases, reliability may deteriorate and the read-failure rate may increase.
But, since the voltage window for a memory cell may be limited, the difference in threshold voltage between adjacent bits may decrease as ‘N’ increases.
Accordingly, read-failure rate may increase.
For this reason, in a conventional art, it may be difficult to improve storage density using a MLC memory device.
Method used
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[0020]Detailed example embodiments are disclosed herein. However, specific structural and functional details disclosed herein are merely representative for purposes of describing example embodiments. Example embodiments may, however, be embodied in many alternate forms and should not be construed as limited to only the embodiments set forth herein.
[0021]Accordingly, while example embodiments are capable of various modifications and alternative forms, embodiments thereof are shown by way of example in the drawings and will herein be described in detail. It should be understood, however, that there is no intent to limit example embodiments to the particular forms disclosed, but to the contrary, example embodiments are to cover all modifications, equivalents, and alternatives falling within the scope of example embodiments. Like numbers refer to like elements throughout the description of the figures.
[0022]It will be understood that, although the terms first, second, etc. may be used h...
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Example embodiments relate to an apparatus which may determine a length of data to be stored in a memory cell, and may store the data in a memory based on the determined length. A memory data storage apparatus according to example embodiments may, include: a determination unit that may determine a number of bits of data and a number of bits of data detection information to be stored in a memory cell; a data receiving unit that may receive data corresponding to the determined number of bits; an error correction coding unit that may perform an error correction coding with respect to the received data and generate data detection information corresponding to the number of bits of the data detection information; and a data storage unit that may store the received data and generated data detection information in the memory cell.
Description
PRIORITY STATEMENT[0001]This application claims priority under 35 U.S.C. §119 to from Korean Patent Application No. 10-2008-0019381, filed on Feb. 29, 2008, in the Korean Intellectual Property Office (KIPO), the entire contents of which is incorporated herein by reference.BACKGROUND[0002]1. Field[0003]Example embodiments relate to a memory apparatus storing data. Also, example embodiments relate to an apparatus which may determine a length of data to be stored in a memory cell, and store the data in a memory cell based on the determined length.[0004]2. Description of Related Art[0005]A single-level cell (SLC) memory device may store one bit of data in a single memory cell. The SLC memory may be referred to as a single-bit cell (SBC) memory. The SLC memory may store and read data of one bit at a voltage level included in two distributions that may be divided by a threshold voltage level programmed in a memory cell. Due to a fine electrical characteristic difference between SLC memori...
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IPC IPC(8): H03M13/00
CPCG06F11/1012G11C11/56G11C29/00G11C29/42G11C7/10
Inventor SONG, SEUNG-HWANCHO, KYOUNG LAEKONG, JUN JINKIM, JAE HONG
Owner SAMSUNG ELECTRONICS CO LTD