Silicon device structure, and sputtering target used for forming the same

Abstract

There is provided a silicon device structure, comprising: a P-doped n+ type amorphous silicon film formed on a silicon semiconductor, and a wiring formed on the P doped n+ type amorphous silicon film, wherein the wiring is formed of a silicon oxide film which is formed on a surface of the P doped n+ type amorphous silicon film and is also formed of a copper alloy film, and the copper alloy film is a film obtained by forming a copper alloy containing Mn of 1 atom % or more and 5 atom % or less and P of 0.05 atom % or more and 1.0 atom % or less by sputtering.

Description

[0001]The present application is based on Japanese Patent Applications No. 2010-155167, filed on Jul. 7, 2010, and No. 2010-274852, filed on Dec. 9, 2010 the entire contents of which are hereby incorporated by reference.TECHNICAL FIELD[0002]The present invention relates to a silicon device structure, and a sputtering target material used for forming the same, and particularly relates to the silicon device structure and the sputtering target material suitably used for a TFT element structure for a liquid crystal panel.DESCRIPTION OF RELATED ART[0003]With an advancement of a larger liquid crystal panel and a faster speed of an operation speed, a lower resistance of array wiring of a TFT element for a liquid crystal panel is required. Therefore, Cu wiring with a lower resistance than traditional aluminium (Al) wiring has been partially employed. Further, according to the TFT element structure for a liquid crystal panel at present, a molybdenum (Mo) film or a titanium (Ti) film, being a...

AI Technical Summary

Benefits of technology

[0022]An object of the present invention is to provide a silicon device structure capable of improving the saturation mobility performance of a silicon device, and a sputtering target material used for forming the silicon device structure, by improving an alloy composition even in a case of a wiring film using a silicon oxide film and CuMn alloy.

[0031]According to the present invention, the saturation mobility performance of the silicon device can be improved.

Problems solved by technology

However, a material cost is high in a case of Mo or Ti, thus increasing a cost of the liquid crystal panel.

According to a method for directly forming the alloy on a surface of a Si semiconductor layer which has been performed at an initial time of study, the alloy capable of obtaining a sufficient barrier property and its formation process can not be found easily.

However, about only 80% of the present Mo barrier is obtained.

According to non-patent document 2, Cu alloy film is formed on the Si semiconductor film by Ar—O2 reactive sputtering, and it is found that diffusion of metal atoms is advanced faster than a reaction of forming the oxide film on the interface by diffusing oxygen in the film, and a sufficient diffusion barrier property can not be obtained.

When an oxide matter exists on the surface of a target (TG), which is a problem in sputtering pure Cu, abnormal discharge occurs at this place, and a film defect failure called splash occurs in some cases, which is caused by TG material which is formed into droplets and adhered to a glass substrate.

Further, sputtering equipment for a large-sized substrate of recent years has a vertical chamber, and in a case of a mixed gas of Ar—O2, there is a possibility that O2 with small molecular weight is separated upward and Ar with large molecular weight is separated downward, thus making non-uniform quantities of O2 in the film, thereby making non-uniform resistance of the film, and making non-uniform properties such as barrier property and ohnmic contact property in the surface of the substrate.

Accordingly, even if using a copper alloy described in any one of the documents, the saturation mobility performance of a silicon device is not sufficient.