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Method of forming a semiconductor device

a technology of semiconductor devices and semiconductor chips, applied in semiconductor/solid-state device manufacturing, solid-state devices, electric devices, etc., can solve problems such as the possibility of forming gaps in tsv chips

Inactive Publication Date: 2013-02-19
PS4 LUXCO SARL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The patent describes a method of forming a semiconductor device by heating the semiconductor chip stack and filling the gaps between the chips with a sealing agent. The heating process involves heating both the upper and lower portions of the chip stack, and the method ensures that the sealing agent is accurately positioned and has good adhesion to the chip stack. The technical effect of this method is to improve the reliability and efficiency of semiconductor device production.

Problems solved by technology

When the semiconductor device is sealed by a molding process, there is a probability of formation of voids in the gap of the TSV chips.

Method used

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  • Method of forming a semiconductor device

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first embodiment

[0046]Hereinafter, a method of forming a semiconductor device according to a first embodiment of the present invention will be described with reference to FIG. 1.

[0047]A method of forming a semiconductor device according to the present embodiment schematically may include the following processes. A chip stack 20 is formed by stacking a plurality of semiconductor chips (TSV chips) 22. A first sealing resin (underfill) 34 fills between the semiconductor chips 22. The first sealing resin 34 is hardened. A first sealant 35 formed of the hardened first sealing resin 34 and the chip stack 20 is sealed using a second sealing resin 36. Hereinafter, the respective processes will be described in detail.

Process of Forming Chip Stack 20

[0048]As shown in FIG. 1A, the chip stack 20 is formed on a wiring board 12. The wiring board 12 may be, but is not limited to, a wiring board in which wiring layers are formed on both surfaces of a glass epoxy base material. The wiring board 12 is held and fixed...

second embodiment

[0078]Hereinafter, a method of forming a semiconductor device according to a second embodiment of the present invention will be described with reference to FIGS. 3 and 4A through 4C. The method of forming the semiconductor device of the present embodiment schematically may include the following processes. A chip stack 20 is formed. A first sealing resin 34 fills the gaps between semiconductor chips 22. The first sealing resin 34 is hardened to be a first sealant 35. The first sealant 35 and the chip stack 20 are sealed using a second sealant. In this embodiment, the first sealing resin 34 fills in the chip stack 20 which is not mounted on the wiring board 12 in contrast to the first embodiment. Descriptions of portions which are the same as those in the first embodiment will be omitted.

Process of Forming Chip Stack 20

[0079]A plurality of semiconductor chips 22 are stacked to form the chip stack 20 as in the first embodiment. A heat stage 50 on which a first sheet 60 is disposed is p...

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Abstract

A method of forming a semiconductor device includes filling a gap of a semiconductor chip stack while carrying out a first heating process which heats the semiconductor chip stack from upper and lower portions of the semiconductor chip stack.

Description

BACKGROUND OF THE INVENTION[0001]1. Field of the Invention[0002]The present invention generally relates to a method of forming a semiconductor device.[0003]Priority is claimed on Japanese Patent Application No. 2010-114208, May 18, 2010, the content of which is incorporated herein by reference.[0004]2. Description of the Related Art[0005]In recent years, chip-on-chip (CoC) type semiconductor devices have received attention, in which through silicon via (TSV) chips are stacked in plurality. Through electrodes are disposed in the TSV chips. Bump electrodes are bonded to each other via through electrodes so that the TSV chips are stacked. However, the bump electrodes have a height of about several micrometers to tens of micrometers. The small height of the bump electrodes can form a narrower gap between the TSV chips than the minimum gap. The minimum gap needs to allow the gap to be sealed with sealing agents without forming a lot of voids. When the semiconductor device is sealed by a ...

Claims

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Application Information

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Patent Type & Authority Patents(United States)
IPC IPC(8): H01L21/44H01L21/48H01L21/50
CPCH01L21/561H01L23/3121H01L23/3135H01L24/97H01L25/50H01L2924/07802H01L2924/12041H01L2924/014H01L2224/16145H01L2224/97H01L2225/06513H01L2225/06517H01L2225/06541H01L2924/01005H01L2924/01006H01L2924/01033H01L2224/81H01L2924/00H01L2924/181
Inventor SHIMADA, NORIOUFUJISHIMA, TOMOYUKI
Owner PS4 LUXCO SARL