Oxide-based semiconductor non-linear element having gate electrode electrically connected to source or drain electrode
a non-linear element, oxide-based technology, applied in the field of nonlinear elements, to achieve the effect of large on-state current, small off-state current, and large on-state curren
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embodiment 1
[0025]In this embodiment, an example of a structure of a diode which is one embodiment of the present invention will be described with reference to FIGS. 1A and 1B. The diode which is described in this embodiment can be obtained by connecting a source or a drain of a field effect transistor, for example, a thin film transistor to a gate thereof.
[0026]In the diode illustrated in FIGS. 1A and 1B, a wiring 125 is connected to a third electrode 113, a third electrode 115, and a second electrode 109, and the second electrode 109 is connected to a first electrode 105 through an oxide semiconductor film 107. The first electrode 105 is connected to a wiring 131.
[0027]FIG. 1A is a top view of a diode-connected thin film transistor 133. FIG. 1B is a cross-sectional view along dashed-and-dotted line A-B in FIG. 1A.
[0028]As illustrated in FIG. 1B, the first electrode 105, the oxide semiconductor film 107, and the second electrode 109 are stacked over an insulating film 103 which is formed over ...
embodiment 2
[0053]In this embodiment, an example of a diode having a structure different from that in Embodiment 1 will be described with reference to FIGS. 3A and 3B. The diode which is described in this embodiment can be obtained by connecting a source or a drain of a field effect transistor, for example, a thin film transistor to a gate thereof.
[0054]In the diode illustrated in FIGS. 3A and 3B, a wiring 131 is connected to a first electrode 105 and a third electrode 113, and a wiring 132 is connected to a first electrode 106 and a third electrode 115. The first electrode 105 and the first electrode 106 are connected to a second electrode 109 through an oxide semiconductor film 107. The second electrode 109 is connected to a wiring 129.
[0055]FIG. 3A is a top view of diode-connected thin film transistors 141 and 143. FIG. 3B is a cross-sectional view along dashed-and-dotted line A-B in FIG. 3A.
[0056]As illustrated in FIG. 3B, the first electrode 105 and the first electrode 106, the oxide semic...
embodiment 3
[0067]In this embodiment, an example of a diode, which is an embodiment of the present invention and has a structure different from those in Embodiments 1 and 2, will be described with reference to FIGS. 5A and 5B. The diode which is described in this embodiment can be obtained by connecting a source or a drain of a field effect transistor, for example, a thin film transistor to a gate thereof.
[0068]In the diode illustrated in FIGS. 5A and 5B, a wiring 131 is connected to a first electrode 105 and a third electrode 113. The first electrode 105 is connected to a second electrode 109 through an oxide semiconductor film 107. The second electrode 109 is connected to a wiring 129.
[0069]FIG. 5A is a top view of a diode-connected thin film transistor 145. FIG. 5B is a cross-sectional view along dashed-and-dotted line A-B in FIG. 5A.
[0070]As illustrated in FIG. 5B, the first electrode 105, the oxide semiconductor film 107, and the second electrode 109 are stacked over an insulating film 103...
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