Unlock instant, AI-driven research and patent intelligence for your innovation.

Compliant dielectric layer for semiconductor device

a dielectric layer and semiconductor technology, applied in semiconductor devices, semiconductor/solid-state device details, electrical apparatus, etc., can solve problems such as circuit damage, die and interposer size limitation, and delamination

Active Publication Date: 2015-12-22
AVAGO TECH INT SALES PTE LTD
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This difference in thermal expansion rates (due to differences in values of coefficients of thermal expansion—CTEs) can cause cracking, delamination, circuit damage, etc.
Furthermore, the larger the die or interposer, the larger the problem becomes, causing a limitation in sizes of dies and interposers that may be used.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

example ic package embodiments

3. Example IC Package Embodiments

[0033]In embodiments, a semiconductor device is formed that may be included in an integrated circuit (IC) package. The semiconductor device includes one or more through-silicon vias through the semiconductor device to route signals through the semiconductor device. The semiconductor device further includes at least one compliant dielectric layer to provide compliance or “flex” during heating / cooling, which reduces package damage / failures that may otherwise occur due to the resulting expansion or contraction. The semiconductor device may be an interposer incorporated into an IC package and used to route signals from an attached die to solder balls / bumps of the semiconductor device, and / or the semiconductor device may be an IC package in itself by including active integrated circuits in the semiconductor device.

[0034]Such a semiconductor device may be configured in various ways to include a compliant dielectric material, in embodiments. For instance, F...

example assembly embodiments

5. Example Assembly Embodiments

[0056]Semiconductor devices may be configured and assembled in various ways, according to embodiments. Turning now to FIG. 8, a flowchart providing example steps for assembling an integrated circuit (IC) package with a compliant dielectric layer is shown. Semiconductor device 100 of FIG. 1, semiconductor device 400 of FIG. 2, semiconductor device 600 of FIG. 6, semiconductor device 700 of FIG. 7, and / or any of their respective components / layers may be assembled in accordance with flowchart 800, in embodiments. Other structural and operational embodiments will be apparent to persons skilled in the relevant art(s) based on the discussion regarding flowchart 800.

[0057]The exemplary steps of flowchart 800 are described with respect to the semiconductor device shown in FIGS. 9-17, in various states of assembly. For instance, FIGS. 9-17 respectively show semiconductor device structures 900-1700 at intermediate states of assembly, while FIG. 1 shows a complet...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
areaaaaaaaaaaa
sizesaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

Systems, apparatuses, and methods provided for semiconductor devices and integrated circuit (IC) packages that include compliant dielectric layers. In a through silicon via interposer or substrate, a compliant dielectric material may be added to a surface of silicon material body to form a compliant dielectric layer. The compliant dielectric layer provides a thermal buffer and a stress buffer for a resulting IC package. The compliant dielectric material may be selected such that the coefficient of thermal expansion of the compliant dielectric material approximately matches the coefficient of thermal expansion of the circuit board on which the IC package is mounted. The compliant dielectric material may be selected such that it has a deformability that is greater than the silicon material body. Multiple sub-layers of compliant dielectric material may be used.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS[0001]This application claims priority to U.S. Provisional Patent Application No. 61 / 918,373, filed Dec. 19, 2013, and entitled “Compliant Dielectric Layer for Semiconductor Device,” the entirety of which is incorporated by reference herein.BACKGROUND[0002]1. Technical Field[0003]The subject matter described herein relates to systems, apparatuses, and methods for compliant dielectric layers for semiconductor devices.[0004]2. Background Art[0005]An integrated circuit (IC) is a common element of electronic devices. An IC typically includes a die (or chip), upon which electrical circuits are formed, and a package that houses the die. Various types of IC packages currently exist. For instance, wafer level packages exist that are basically dies cut from wafers that have interconnects (e.g., solder bumps) mounted directly thereto. The solder bumps are spaced out on the dies by redistribution layers (RDLs) to enable the solder bumps to be directly mou...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(United States)
IPC IPC(8): H01L25/065H01L21/768H01L23/528H01L23/498H01L21/48H01L23/48
CPCH01L25/0655H01L21/486H01L21/4828H01L21/4853H01L21/768H01L23/48H01L23/481H01L23/49827H01L23/49838H01L23/528H01L2224/13H01L2224/73204
Inventor KHAN, REZAUR RAHMANZHAO, SAM ZIQUN
Owner AVAGO TECH INT SALES PTE LTD