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LED chip

A technology of light-emitting diodes and chips, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., and can solve problems such as the reduction of the light-emitting area of ​​the light-emitting diode 301, the poor reliability of the light-emitting diode chip 300, and the influence of the brightness of the light-emitting diode 301, etc.

Active Publication Date: 2008-10-15
FORMOSA EPITAXY INCORPORATION +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the electrodes 5 and 8 must be connected by long wires, and if the wires are too long, the light-emitting diode chip 300 may have a problem of poor reliability.
In addition, since the diode 302 occupies part of the area on the substrate 310, the light-emitting area of ​​the LED 301 is relatively reduced, so that the brightness of the LED 301 is affected.

Method used

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no. 1 example

[0094] Figure 4A It is a schematic diagram of a light-emitting diode chip according to the first embodiment of the present invention, and Figure 4B It is a schematic diagram of an equivalent circuit of a light emitting diode chip according to the first embodiment of the present invention. Please also refer to Figure 4A and Figure 4B The LED chip 400 of the present invention includes a substrate 410, an electrostatic conductive layer 420, a first-type doped semiconductor layer 430, an active layer 440, a second-type doped semiconductor layer 450, a first electrode M1 and a second electrode M2. Wherein, the electrostatic conduction layer 420 is disposed on the substrate 410 . Generally speaking, we can selectively form the buffer layer 412 between the substrate 410 and the electrostatic conductive layer 420 to improve the lattice matching properties of the electrostatic conductive layer 420 and the substrate 410 . The material of the aforementioned buffer layer 412 is, f...

no. 2 example

[0102] Figure 4C It is a schematic diagram of a light-emitting diode chip according to the second embodiment of the present invention, and Figure 4D It is a schematic diagram of an equivalent circuit of a light emitting diode chip according to the second embodiment of the present invention. Please also refer to Figure 4C and Figure 4D , the second embodiment is similar to the first embodiment, the main difference between the two lies in: the number of electrodes used in this embodiment and the arrangement positions of Schottky contact electrodes. In detail, the LED chip 500 of this embodiment further includes a second Schottky contact electrode S2, the second Schottky contact electrode S2 is disposed on the electrostatic conductive layer 420, and the second Schottky contact electrode S2 is, for example, The second wire 20 is electrically connected to the first electrode M1.

[0103] When the light-emitting diode chip 500 operates at a normal voltage, since the interfac...

no. 3 example

[0107] Figure 5A It is a schematic diagram of a light-emitting diode chip according to the third embodiment of the present invention, and Figure 5B It is a schematic diagram of an equivalent circuit of a light emitting diode chip according to the third embodiment of the present invention. Please also refer to Figure 5A and Figure 5B , this embodiment is very similar to the second embodiment, the main difference between the two is: the LED chip 600 of this embodiment also includes a current blocking layer B, which is for example arranged on the electrostatic conductive layer 420 and the first type doped semiconductor between the layers 430, and the doping type of the material of the current blocking layer B is different from that of the static conduction layer 420, the material of the current blocking layer B can be composed of GaN-based or insulating materials .

[0108] In detail, the current blocking layer B and the second-type doped semiconductor layer 450 are, for ...

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Abstract

This invention relates to a LED chip including a base plate, a static conduction layer, a first kind of doped semiconductor layer, an active layer, a second kind of doped semiconductor layer, a first electrode and a second electrode, in which, the static conduction layer is set on the base plate, and the first doped semiconductor layer is set on part of the static conduction layer, besides, the active layer is set on part region of the first doped semiconductor layer and the second doped semiconductor layer is set on the active layer, apart from it, the first electrode is set on the first doped semiconductor layer and the second electrode is set on the second one.

Description

technical field [0001] The present invention relates to a light-emitting diode chip, and in particular to a light-emitting diode chip with electrostatic discharge protection function (electro static discharge protection). Background technique [0002] In recent years, light-emitting diode elements can be said to be widely used, and are generally used in traffic lights (traffic lights), large-scale display boards, or as light sources for flat-panel displays. In order to prevent the LED from being damaged by ESD, a common solution is to use an additional diode (such as a Zener diode) in anti-parallel connection with the LED. When electrostatic discharge occurs, the high-voltage characteristics of static electricity will cause the diode used to prevent static electricity to operate in its breakdown voltage (breakdown voltage) region. At this time, the diode connected in anti-parallel with the light-emitting diode can effectively prevent the light-emitting diode from being charg...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L33/38
Inventor 陈铭胜武良文简奉任
Owner FORMOSA EPITAXY INCORPORATION