Dynamic random access memory and mfg. method thereof

Abstract

The invention is a dynamic random access memory (DRAM), comprising substrate, active component and deep tunnel capacitor, where the substrate has tunnel and deep tunnel; the active component is arranged on the substrate and comprises grid structure and doping region, the grid structure is arranged on the substrate and filled in the tunnels and the doping region is arranged in the substrate on the first side of the grid; the deep tunnel capacitor is arranged in the deep tunnel in the substrate on the second side of the grid; the first and second sides are opposite to each other; and electrodes on the deep tunnel capacitor are adjacent to the tunnel bottom.

Description

technical field [0001] The present invention relates to a semiconductor element and its manufacturing method, and in particular to a dynamic random access memory and its manufacturing method. Background technique [0002] As the functions of today's computer microprocessors (Microprocessor) become more and more powerful, the programs and calculations performed by software are also becoming more and more complex. Therefore, memory manufacturing technology has become one of the important technologies in the semiconductor industry. [0003] In general, memory can be classified into volatile memory and non-volatile memory according to the type of data stored therein. A dynamic random access memory (Dynamic Random Access Memory, DRAM) is a kind of volatile memory, and it is composed of a plurality of storage units. Each memory cell is composed of an active element and a capacitor, and each memory cell is electrically connected to each other through a word line (WL, WL) and a bi...

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Problems solved by technology

[0007] However, in the above-mentioned DRAM, since the active element 106 is usually produced by a lithographic etching process, the length d of the channel region of the active element 106 will be limited by the lithographic etching process and cannot be further refined. Shrinking, so that the component integration level cannot be further improved

On the other hand, the reduction of the length d of the channel region will also cause the problem of the starting voltage deviation of the active element and the so-called short channel effect.

In order to solve the above problems, an existing method is to increase the dopant concentration in the channel of the active device, but this method will increase the field junction leakage current (field junction leakage) and affect the reliability of the device.

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