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Thin film transistor structure

A technology of thin film transistors and transistors, applied in the direction of transistors, electric solid-state devices, semiconductor devices, etc., can solve the problems of reduced aperture ratio, occupied panel, large voltage jump range, etc., and achieve the effect of increased parasitic capacitance

Active Publication Date: 2009-01-14
AU OPTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, increasing the compensation capacitor will take up the area of ​​the panel that can be used as the light-emitting part, thus reducing the aperture ratio (that is, the ratio of the light-emitting area of ​​the pixel to the total area of ​​the pixel)
At the same time, too large a compensation capacitor will lead to excessive voltage fluctuations, which need to be avoided as much as possible.

Method used

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Embodiment Construction

[0025] First please refer to figure 1 , which is a schematic top view of the thin film transistor structure 1 according to the first embodiment of the present invention. The TFT structure 1 includes a main TFT 11 and an auxiliary TFT 12 . The main TFT 11 and the auxiliary TFT 12 are electrically connected to each other in parallel and share a gate 115 . The main TFT 11 includes a first electrode 111 and a second electrode 112 , wherein the second electrode 112 has a lateral dimension, ie width, and both are respectively connected to the drain and the source of the main TFT 11 . The auxiliary TFT 12 includes a third electrode 113 and a fourth electrode 114 respectively connected to the drain and the source of the auxiliary TFT 12 . The second electrode 112 is electrically connected to the fourth electrode 114, and the first electrode 111 and the third electrode 113 are connected to different pixel electrodes (not shown in the figure), and the second electrode 112 is connected...

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Abstract

The disclosed structure of Thin Film Transistor (TFT) is in use for liquid crystal display of transistors. The TFT includes a grid, a first electrode, a second electrode, a dielectric layer, and a channel. The structure of transistor uses superposition area between first electrode and grid to form parasitic capacitance not drifted by technological flow. Thus, the invention can eliminate external compensation capacitance, and raise aperture rate.

Description

technical field [0001] The invention relates to a thin film transistor structure, in particular to a thin film transistor structure used in a transistor liquid crystal display. Background technique [0002] In recent years, flat panel displays have developed more and more rapidly, and have gradually replaced traditional cathode ray tube displays. Today's flat panel displays mainly include the following types: Organic Light-Emitting Diodes Display (OLED), Plasma Display Panel (PDP), Liquid Crystal Display (LCD) and Field Emission Display (Field Emission Display). Display; FED) and so on. The thin film transistor (TFT), which controls the on and off of each pixel in these flat panel displays, is one of the key components in these flat panel displays. [0003] In the panel manufacturing process, maintaining a stable process flow can ensure good process quality and improve manufacturing yield. However, during the manufacturing process, due to the difference in environmental c...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G02F1/1362G02F1/136H01L27/12H01L29/786
Inventor 林友民甘丰源
Owner AU OPTRONICS CORP