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Method for integrating insulation film between fluorine doped silicon oxide glass layers

A technology of interlayer insulating film and silicon oxyfluoride, which is applied in the manufacture of electrical components, electrical solid devices, semiconductor/solid devices, etc., can solve problems such as complex processes, affecting the electrical properties of devices, and insufficient oxygen free radical binding, achieving The effect of meeting the electrical requirements

Inactive Publication Date: 2009-04-01
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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Problems solved by technology

[0003] The main disadvantage of the above method is that the process is relatively complicated, and the semiconductor processed according to this method does not sufficiently bind the oxygen free radicals in the FSG, and the metal wiring layer is easily corroded, thereby affecting the electrical properties of the device.

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  • Method for integrating insulation film between fluorine doped silicon oxide glass layers
  • Method for integrating insulation film between fluorine doped silicon oxide glass layers

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Embodiment Construction

[0010] The present invention will be described in further detail below in conjunction with the accompanying drawings.

[0011] Such as figure 2 As shown, the integration method of the fluorine-doped silica glass interlayer insulating film of the present invention comprises the following steps: Step 1, depositing fluorine-doped silica glass (FSG) interlayer insulating film; Step 2, depositing a stress range of - 250MPa to -600MPa plasma n-tetraethoxysilane film; step 3, chemical mechanical polishing planarization; step 4, opening holes to form tungsten connection lines; step 5, chemical mechanical polishing of the tungsten layer; step 6, depositing the upper metal wiring layer.

[0012] and figure 1 The difference of the prior art shown is that the method provided by the present invention directly deposits a high-stress plasma n-tetraethoxysilane film to achieve the purpose of binding free radicals of fluorine after depositing FSG, and the stress of the silane film reaches ...

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Abstract

The present invention discloses a method of integrating an insulating layer amongst glass layers containing silicon oxyfluoride, which includes procedures below: Firstly, it is necessary to settle positive plasma tetraethoxysilane insulating films containing silicon oxyfluoride with stress ranging from -250MPa to -600MP and then polish and flatten through chemical mechanical polishing. In addition, it needs to retain in a positive plasma tetraethoxysilane insulating film with high stress. A tungsten connecting wire is formed in an opening. And then, chemical mechanical polishing is carried out to a tungsten layer. An upper metal connecting wire layer is settled. The present invention fully binds free fluorine radicals in glass containing silicon oxyfluoride through high-stress positive plasma tetraethoxysilane insulating films, thus enabling the upper metal connecting wire free from corrosion and meeting electrical requirements of appliances.

Description

technical field [0001] The invention relates to a process integration method for semiconductor production, in particular to an integration method for an interlayer insulating film of fluorine-doped silicon oxide glass. Background technique [0002] In the process of using fluorine-doped silica glass (FSG) as the interlayer insulating film at the back end of the semiconductor, it is usually necessary to prevent the fluorine radicals in the FSG from diffusing to the top and corroding the metal wiring layer. At present, the integration method of FSG interlayer insulating film is as follows: figure 1 As shown, it includes depositing FSG interlayer insulating film; depositing plasma n-tetraethoxysilane film; chemical mechanical polishing planarization; depositing oxide with high refractive index; opening holes to form tungsten connection lines; Polishing; deposition of the upper metal wiring layer. In this method, after depositing the FSG interlayer insulating film, deposit ord...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/768H01L21/31H01L23/532
Inventor 李菲
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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