Organic electroluminescence device and method for fabricating the same
A light-emitting display, organic technology, applied in the field of OLED, can solve the problems of complex process, reduced yield, and prolonged overall process operation time.
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Embodiment 1
[0038] 2A to 2H are cross-sectional views illustrating an organic light emitting display device (OLED) having a bottom gate complementary metal oxide semiconductor thin film transistor (CMOS TFT) and a method of manufacturing the same according to an exemplary embodiment of the present invention.
[0039] Referring to FIGS. 2A to 2H , an OLED having a bottom gate type CMOSTFT according to an exemplary embodiment of the present invention includes a substrate 200 having a first TFT region A, a second TFT region B, an opening region C, and an interconnection region D. Referring to FIGS. The substrate 200 may be a transparent substrate formed of glass, plastic, or quartz.
[0040] Referring to FIG. 2A, a first gate electrode 210, a second gate electrode 215, and a metal interconnection 220 are formed in first and second TFT regions A and B of a substrate 200 using a first mask (not shown). composition. The first and second gate electrodes 210 and 215 may be formed of a material s...
Embodiment 2
[0069] 3A to 3I are cross-sectional views illustrating an OLED having a top-gate type CMOSTFT and a manufacturing method thereof according to another embodiment of the present invention.
[0070] Referring to FIG. 3A , an OLED having a top gate type CMOS TFT according to another embodiment of the present invention includes a substrate 300 having a first TFT region A, a second TFT region B, an opening region C and an interconnection region D. Referring to FIG. The substrate 300 may be a transparent substrate formed of glass, plastic, or quartz.
[0071] A metal interconnection 310 is formed in the interconnection region D of the substrate 300 using a first mask (not shown). Metal interconnection 310 may be formed of one material selected from the group containing Mo, W, Al, and alloys thereof. Metal interconnection 310 may be formed by a sputtering method or a vacuum deposition method. Generally, metal interconnection 310 may be formed by depositing material using a sputterin...
PUM
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