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Original chloride transfer method for generation of transition metal compound nano structure

A nanostructure and chloride technology, applied in the direction of metal silicide, nitrogen-metal/silicon/boron binary compound, nanostructure manufacturing, etc., can solve problems such as unsatisfactory lectures, achieve high cost, environmental friendliness, and low synthesis cost Reduced effect

Inactive Publication Date: 2009-05-20
NANJING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] From the above, it can be seen that the lectures on the preparation of transition metal compound nanomaterials are still not ideal, and precursors such as metal organic compounds or metal chlorides are often used to prepare transition metal compound nanomaterials.

Method used

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  • Original chloride transfer method for generation of transition metal compound nano structure
  • Original chloride transfer method for generation of transition metal compound nano structure
  • Original chloride transfer method for generation of transition metal compound nano structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] Example 1 to load a trace amount of NiCl 2 Chromium powder as raw material, at 700-900°C, NH 3 / N 2 Under the atmosphere, the chromium-based nanostructures were prepared.

[0035] A small amount of NiCl will be loaded 2 The chromium powder is transferred to the corundum boat, and the boat is covered with 1×1cm 2 The size of the gold-plated silicon wafer, and then put the corundum boat in the center of the furnace tube. Repeat argon filling and mechanical pump evacuation for 3-5 times, raise the temperature to 700-900°C at a rate of 10°C per minute in an argon atmosphere (46sccm), then turn off the Ar gas, and feed 50sccm of NH 3 / N 2 Mixed gas, react for 40min. A gray-black deposit grows on the gold-plated silicon wafer. The results are characterized as: CrN nanowires obtained by nitriding at 700°C, and trace CrSi doped by nitriding at 800°C 2 CrN nano-cables, 900 ° C nitriding to get CrSi 2 Nano cable. (See image 3 , Figure 4 , Figure 5 , Figure 6 , ...

Embodiment 2

[0036] Example 2 to load a trace amount of NiCl 2 Chromium powder was used as raw material, and CrSi was prepared at 700°C under Ar atmosphere 2 Nano-structure.

[0037] A small amount of NiCl will be loaded 2 The chromium powder is transferred to the corundum boat, and the boat is covered with 1×1cm 2 The size of the gold-plated silicon wafer, and then put the corundum boat in the center of the furnace tube. Repeat argon filling and mechanical pump evacuation for 3-5 times. Under argon atmosphere (46sccm), the temperature is raised to 700°C at a rate of 10°C per minute, maintained for 40min, and then cooled to room temperature. A dense off-white product was obtained on silicon wafers, characterized as CrSi 2 Nanowires. (See Figure 9 )

Embodiment 3

[0038] Example 3 is to load a trace amount of NiCl 2 Chromium powder was used as raw material, and CrSi was prepared at 700°C under Ar atmosphere 2 Nano-structure.

[0039] A small amount of NiCl will be loaded 2 The chromium powder is transferred to the corundum boat, and the boat is covered with 1×1cm 2 The size of the quartz piece, and then put the corundum boat in the center of the furnace tube. Repeat argon filling and evacuation with a mechanical pump for 3-5 times, raise the temperature to 800°C at a rate of 10°C per minute under an argon atmosphere (46sccm), then turn off the Ar gas, and feed 50sccm of NH 3 / N 2 Mixed gas, react for 40min. Gray-black deposits grew on the quartz sheet, characterized by pure CrN nanowires. (See Figure 10 )

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Abstract

A in situ chloride transfer method for growing transition metal compound nanostructure uses chromium powder loaded with trace metal chloride as raw material; wherein chromium compound one-dimensional nanometer material of a plurality of appearances can grow extensively on the silicon chip or quartz plate by controlling the heating temperature in the presence of Ar or NH3 / N2; the chromium compound one-dimensional nanometer material comprises a CrN nanometer particle, a nanometer line and a nanometer cable or a CrSi2 nanometer line and a nanometer cable, wherein the sheath layers of the CrN and CrSi2 nanometer cables are all packaged by silicon nitride; the nitridation or silicification has a temperature of 700~1200 DEG C and a time of 40+ / -10 min; the reaction mix gas of nitridation is NH3 / N2, wherein the NH3 has a content of 4+ / -2% by volume.

Description

technical field [0001] The invention relates to an in-situ generation of required chlorides as gaseous precursors to grow uniform chromium-based compound nanostructures on the surface of silicon wafers or quartz wafers in a large area, including CrN nanoparticles, nanowires, nanocables and CrSi 2 Nanowires, nanocables. Background technique [0002] In recent years, one-dimensional nanostructures (nanotubes, nanowires, nanorods, nanoribbons, and their composite structures) have attracted great interest due to their important scientific value and potential applications. Both theoretical and experimental studies have shown that one-dimensional nanostructured materials have a series of excellent properties, such as high mechanical strength, unique electrical, optical and magnetic properties. Therefore, people are competing to use various technical routes to synthesize various one-dimensional nanostructures with special properties. Chemical vapor deposition (CVD) has become one...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B21/06C01B33/06B82B3/00
Inventor 余乐书胡征马延文陈懿
Owner NANJING UNIV