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Ion beam incident angle detector for ion implant systems

A technology for ion implantation systems, angle detectors, applied in ion beam tubes, material analysis using wave/particle radiation, instruments, etc., capable of solving problems such as doping, damage to device structures, incorrect depths, and similar problems

Active Publication Date: 2009-05-27
AXCELIS TECHNOLOGIES
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Such errors can undesirably alter the implant profile, fail to dope into specific regions, implant dopants into unintended regions, damage device structures, dope to incorrect depths, and similar problems

Method used

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  • Ion beam incident angle detector for ion implant systems
  • Ion beam incident angle detector for ion implant systems
  • Ion beam incident angle detector for ion implant systems

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Embodiment Construction

[0033] The present invention will be described below with reference to the accompanying drawings, in which similar reference numerals are used throughout to denote similar elements. Those skilled in the art will realize that the present invention is not limited to the exemplary embodiments and aspects set forth and described below.

[0034] The present invention facilitates the manufacture of semiconductor devices by using one or more ion beam incident angle detectors discussed below to monitor and correct angle errors during ion implantation. In addition, the present invention facilitates the manufacture of semiconductor devices by again using one or more ion beam incident angle detectors to calibrate the process disk with respect to the incident ion beam without measuring the incident result on the wafer.

[0035] Starting from FIG. 1, a cross-sectional view of the beam incident angle detector 100 according to an aspect of the present invention is shown below. The angle detector...

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PUM

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Abstract

The present invention facilitates the fabrication of semiconductor devices by monitoring and correcting angular errors through an incident ion beam angle detector during ion implantation. Furthermore, the present invention facilitates the fabrication of semiconductor devices by calibrating the process disk relative to the incident ion beam prior to performing the ion implantation process without measuring the implantation results on the wafer.

Description

Technical field [0001] The present invention mainly relates to semiconductor device manufacturing and ion implantation, and more specifically relates to calibration, detection and / or adjustment of the ion beam incident angle during installation or in situ. Background technique [0002] Ion implantation is a physical process used in the manufacture of semiconductor devices to selectively implant dopants into semiconductor and / or wafer materials. Therefore, the implantation does not depend on the chemical interaction between the dopant and the semiconductor material. To perform ion implantation, dopant atoms / molecules are ionized, accelerated, beamed, analyzed and scanned across the wafer, or the wafer is scanned across the beam. The dopant ions physically bombard the wafer, enter the surface, and reside below the surface at a depth related to its energy. [0003] The ion implantation system is a collection of complex subsystems that perform specific roles on the dopant ions. The d...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01J37/317H01J27/24G01N21/00G01N23/00G21K5/10H01J37/244H01J37/304H01L21/00H01L21/265H01L21/66
CPCH01J37/244H01J2237/24528H01J37/3171H01J2237/30455H01J37/3045H01J2237/24578H01J37/304H01L21/265H01L22/00
Inventor R·里斯M·格拉夫T·帕里尔B·弗里尔
Owner AXCELIS TECHNOLOGIES