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Method of manufacturing semiconductor device having tungsten gates electrode

A semiconductor and gate electrode technology, which is applied in the field of manufacturing semiconductor devices and can solve the problems of degradation of W film gap filling characteristics, etc.

Inactive Publication Date: 2009-05-27
SK HYNIX INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This leads to a great degradation of the gap-fill characteristic of the W film

Method used

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  • Method of manufacturing semiconductor device having tungsten gates electrode
  • Method of manufacturing semiconductor device having tungsten gates electrode
  • Method of manufacturing semiconductor device having tungsten gates electrode

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Embodiment Construction

[0031] Now, preferred embodiments of the method according to the disclosure will be described with reference to the accompanying drawings. Since the preferred embodiment is provided to enable those skilled in the art to understand the disclosed method, it can be modified in various forms, and the scope of the claimed invention is not limited to the hereinafter described preferred embodiment.

[0032] Figures 1A to 1I is a sectional view for explaining the method of manufacturing the semiconductor device according to the first embodiment.

[0033] refer to Figure 1A , on the semiconductor substrate 10, sequentially form a tunnel oxide film 11 for the floating gate, a first polysilicon film 12, an interlayer dielectric film 13 for the control gate, a second polysilicon film 14, and Nitride film 15. A hard mask film 16 is formed on the nitride film 15 .

[0034] Nitride film 15 can be formed up to 500 to thickness, and the hard mask film 16 can be formed to 500 to thick...

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PUM

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Abstract

Disclosed herein is a method of manufacturing semiconductor devices. The method includes the steps of forming a gate oxide film, a polysilicon film and a nitride film on a semiconductor substrate, and patterning the gate oxide film, the polysilicon film and the nitride film to form poly gates, forming a spacer at the side of the poly gate, forming a sacrifice nitride film on the entire surface, and then forming an interlayer insulation film on the entire surface, polishing the sacrifice nitride film formed on the interlayer insulation film and the poly gates so that the nitride film is exposed, removing top portions of the sacrifice nitride film while removing the nitride film, forming an insulation film spacer at the side exposed through removal of the nitride film, and filling a portion from which the sacrifice oxide film is removed with an insulation film, and forming the tungsten gates in portions from which the nitride films are moved.

Description

technical field [0001] The invention relates to a method for manufacturing a semiconductor device, in particular to a method for manufacturing a semiconductor device with a tungsten gate electrode. Background technique [0002] Among semiconductor memory devices, flash memory devices are characterized in that information stored in memory cells is not lost even if power is turned off. Accordingly, flash memory devices have been widely used in memory cards used in computers and the like. [0003] Like a unit cell of a flash memory device, a well-known memory cell has a structure in which a conductive film for a floating gate and a conductive film for a control gate are stacked in sequence. [0004] The conductive film for the floating gate and the conductive film for the control gate are usually formed using polysilicon. In particular, polysilicon films and tungsten silicide (WSi x ) film is generally used as a conductive film for a control gate. [0005] However, as the d...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/336H01L21/283
CPCH01L27/11521H01L21/28273H01L29/40114H10B41/30H10B41/40
Inventor 郑哲谟赵挥元金正根
Owner SK HYNIX INC