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Method for manufacturing integrated circuit

A manufacturing method and integrated circuit technology, which is applied in the direction of circuit, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of different sensitivity to light, and achieve the effect of improving uniformity and flatness

Inactive Publication Date: 2009-05-27
SANYO ELECTRIC CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0016] Therefore, if the opening portion is formed by etching under the above-mentioned conditions, as Figure 8 As shown in (c), even after etching, the film thickness of the side end of the light-receiving part is thicker than that of the central part, and there is a problem that the light-receiving sensitivity varies within the surface of the light-receiving part.

Method used

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  • Method for manufacturing integrated circuit
  • Method for manufacturing integrated circuit
  • Method for manufacturing integrated circuit

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Embodiment Construction

[0037] Hereinafter, an embodiment of the present invention (hereinafter referred to as embodiment) will be described with reference to the drawings.

[0038] This embodiment is a photodetector mounted in an optical pickup mechanism of an optical disc playback device called CD or DVD.

[0039] FIG. 1 is a schematic plan view of a semiconductor element serving as a photodetector according to the present embodiment. This photodetector 50 is formed on a semiconductor substrate made of silicon, and is configured to include a light receiving unit 52 and a circuit unit 54 . The light receiving unit 52 includes, for example, four PIN photodiodes (PDs) 56 arranged in 2×2, and divides and receives light incident on the substrate surface from the optical system into four divisions of 2×2. The circuit unit 54 is arranged, for example, around the light receiving unit 52 . The circuit unit 54 includes, for example, circuit elements such as CMOS 58 . Using these circuit elements, an amplif...

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PUM

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Abstract

The flatness of the surface of the light-receiving portion must be increased when the upper structural layer of a light detector is etched. The present invention provides a method for manufacturing an integrated circuit in which an aperture is formed in a stack in which an underlayer, a light-receiving area pad, and an upper structural layer are layered on a substrate, the method comprising a light-receiving area pad etching step for etching the structural layer and the light-receiving area pad under etching conditions in which a high selectivity ratio is maintained between the upper structural layer and the light-receiving area pad; and an underlayer etching step for switching to etching conditions in which the light-receiving area pad has a high selectivity ratio in relation to the underlayer following the light-receiving area pad etching step, and etching the light-receiving area pad and the underlayer. The bottom surface of the aperture can thereby be made flatter and the amount of incident light in the plane of the light-receiving portion can be made more uniform.

Description

technical field [0001] The present invention relates to a manufacturing method for forming an integrated circuit on a semiconductor substrate, and more particularly, to a method of etching an upper structure layer stacked on the substrate. Background technique [0002] In recent years, an optical disk called a CD (Compact Disk) or a DVD (Digital Versatile Disk) occupies a large place as an information recording medium. These optical disc playback devices irradiate laser light along the track of the optical disc by means of an optical pickup mechanism, and detect the reflected light. And the recorded data is reproduced according to the change in the intensity of the reflected light. [0003] Since the data rate read from the optical disk is very high, the photodetector for detecting reflected light is composed of a semiconductor element using a PIN photodiode with a fast response speed. The weak photoelectric conversion signal generated in the light receiving portion of the...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/82H01L27/14
CPCH01L31/18
Inventor 山田哲也今井勉
Owner SANYO ELECTRIC CO LTD