Light-emitting diode package, light-emitting diode array and method for improving chromatic aberration
A technology of light-emitting diodes and diodes, which is applied in the direction of electrical components, electric solid-state devices, circuits, etc., can solve the problems of high manufacturing cost, low product qualification rate, and difficult manufacturing of the number of components, and achieve the effect of improving the decay rate
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no. 1 example
[0068] Please refer to image 3 , which is a schematic cross-sectional side view of a light emitting diode package according to the first embodiment of the present invention. The LED package 200 includes a carrier 210 , a LED chip 220 , a chip bonding layer 230 and a plurality of bonding wires 240 . The LED chip 220 is disposed on the carrier 210, and the chip bonding layer 230 is disposed between the LED chip 220 and the carrier 210, wherein the chip bonding layer 230 has a plurality of holes (holes) 232 for modulating (modulate) light emission. The bonding area between the diode chip 220 and the chip bonding layer 230 . In addition, the LED chips 220 are electrically connected to the carrier 210 through the bonding wires 240 .
[0069] In the first embodiment, the carrier 210 is, for example, a circuit board, which may have a cavity 212 and a plurality of pins 214 , and the cavity 212 exposes partial areas of the pins 214 . The LED chip 220 may have a plurality of bonding...
no. 2 example
[0074] Please refer to Figure 5A , which is a schematic cross-sectional side view of a light-emitting diode array according to the second embodiment of the present invention. The light emitting diode array 30 of the second embodiment includes a plurality of light emitting diode packages 300(b), 300(g) and 300(r)( image 3 One each) and the array carrier M are shown only schematically. Wherein, the components included in each LED package 300(b), 300(g) and 300(r) and their descriptions are the same as those described in the first embodiment, so they will not be repeated here. In addition, the array carrier M carries these LED packages 300(b), 300(g) and 300(r), and is electrically connected with these LED packages 300(b), 300(g) and 300(r), wherein The chip bonding layers 330(b), 330(g) and 330(r) have a plurality of holes 332(b), 332(g) and 332(r) for modulating the LED chips 320(b), 320(g) and 320(r) and the bonding areas of these die attach layers 330(b), 330(g) and 330(...
no. 3 example
[0081] Please refer to Figure 6 , which is a schematic cross-sectional side view of a light emitting diode array according to the third embodiment of the present invention. The main difference between the third embodiment and the second embodiment is that the light emitting diode array 40 of the third embodiment also includes light emitting diode chips 420(y) with yellow light and light emitting diode chips 420(o) with orange light. Diode packages 400(y) and 400(o).
[0082] Among them, blue LED chip 420(b), green LED chip 420(g), red LED chip 420(r), yellow LED chip 420(y) and orange LED chip 420(o) The bonding areas to the die-bonding layers 430(b), 430(g), 430(r), 430(y) and 430(o) are respectively X, a 1 X, a 2 X, a 3 X and a 4 X, and 1>a 1 >a 3 >a 4 >a 2 . In addition, a 1 Can be between 0.90 and 0.99, a 2 Can be between 0.70 and 0.89, a 3 can be between 0.85 and 0.89, and a 4 Can be between 0.79 and 0.84.
[0083] To sum up, since the LED package, LED arr...
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