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Anti-ferroelectric thin film used as thermoelectrical material and preparing method and use thereof

An antiferroelectric and pyroelectric technology, applied in electric radiation detectors, photometry using electric radiation detectors, etc., can solve the problems of research and development, antiferroelectric thin film pyroelectric research that have not seen reports, etc. , to achieve a large pyroelectric coefficient, improve sensitivity, and broad market prospects

Inactive Publication Date: 2009-09-30
TONGJI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, some critical phenomena in the phase transition of antiferroelectric thin films, especially the behavior of pyroelectricity, have not yet been deeply and systematically researched and developed.
[0006] At present, there are more studies on pyroelectric materials with phase transitions between ferroelectric-paraelectric and ferroelectric-ferroelectric, but less research on the pyroelectric effect of antiferroelectric-ferroelectric phase transitions, and they are all concentrated in In antiferroelectric ceramic bulk materials, the pyroelectric research on antiferroelectric thin films has not been reported

Method used

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  • Anti-ferroelectric thin film used as thermoelectrical material and preparing method and use thereof
  • Anti-ferroelectric thin film used as thermoelectrical material and preparing method and use thereof

Examples

Experimental program
Comparison scheme
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Embodiment 1

[0025] p (Pb,Nb)(Zr,Sn,Ti)O 3 system, select Pb 0.99 Nb 0.02 (Zr 0.85 sn 0.13 Ti 0.02 ) 0.98 o 3 (PNZST) is in the region of the antiferroelectric orthorhombic system.

[0026] The chemical raw material used is lead acetate Pb(CH 3 COO) 2 ·3H 2 O, niobium ethanol Nb(OC 2 h 5 ) 5 , tin acetate Sn(CH 3 COO) 4 , zirconium isopropoxide Zr (OC 3 h 7 ) 4 and titanium isopropoxide Ti(OC 3 h 7 ) 4 , the solvent is glacial acetic acid, ethylene glycol ether and deionized water. First lead acetate Pb(CH 3 COO) 2 ·3H 2 O was weighed according to the stoichiometric ratio, a certain amount of glacial acetic acid was added, the molar ratio of Pb to glacial acetic acid was 1:10, heated to 110°C and refluxed for 1 hour; after cooling to room temperature, tin acetate Sn(CH 3 COO) 4 And continue to reflux for 1 hour; After cooling to room temperature, add ethylene glycol ether, niobium ethoxide Nb(OC 2 h 5 ) 5 , zirconium isopropoxide Zr (OC 3 h 7 ) 4 and titanium...

Embodiment 2

[0033] p (Pb,La)(Zr,Sn,Ti)O 3 system, select Pb 0.97 La 0.02 (Zr 0.75 sn 0.16 Ti 0.09 )O 3 (PLZST) is close to the antiferroelectric and ferroelectric phase boundary but in the antiferroelectric tetragonal phase region.

[0034] The chemical raw material used is lead acetate Pb(CH 3 COO) 2 ·3H 2 O, lanthanum acetate La(CH 3 COO) 3 ·H 2 O, tin acetate Sn(CH 3 COO) 4 , zirconium isopropoxide Zr (OC 3 h 7 ) 4 and titanium isopropoxide Ti(OC 3 h 7 ) 4 , the solvent is glacial acetic acid, ethylene glycol ether and deionized water.

[0035] First lead acetate Pb(CH 3 COO) 2 ·3H 2 O and lanthanum acetate La(CH 3 COO) 3 ·H 2 O was weighed according to the stoichiometric ratio, a certain amount of glacial acetic acid was added, the molar ratio of (Pb+La) to glacial acetic acid was 1:10, heated to 110°C and refluxed for 1 hour; after cooling to room temperature, tin acetate Sn(CH 3 COO) 4 And continue to reflux for 1 hour; After cooling to room temperature, a...

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Abstract

The invention discloses an antiferroelectric thin film with adjustable working temperature range and large pyroelectric coefficient, its preparation method and application. The antiferroelectric thin film (Pb, La or Nb) (Zr, Sn, Ti) O of the present invention as pyroelectric material, it adopts sol-gel method to prepare, and the solute of precursor solution is lead acetate, lanthanum acetate La Or niobium ethoxide, tin acetate, zirconium isopropoxide and titanium isopropoxide, the solvent is glacial acetic acid, ethylene glycol ether, acetylacetone and water, the final concentration of the precursor solution is controlled between 0.2-0.4M, the substrate is LaNiO3 / Pt / Ti / SiO2 / Si and Pt / Ti / SiO2 / Si. The antiferroelectric thin film of the invention has high pyroelectric current and adjustable temperature, and can be used in infrared pyroelectric detectors, smart devices and systems.

Description

technical field [0001] The invention belongs to the technical field of preparing an antiferroelectric thin film with adjustable working temperature range and large pyroelectric coefficient by chemical method, its preparation method and application. Background technique [0002] The antiferroelectric state (AFE) of antiferroelectric materials can be transformed into ferroelectric state (FE) by the action of temperature, electric field and pressure. Since there are abundant structural phases near the phase boundary where antiferroelectricity transforms into ferroelectricity, and external fields such as temperature, stress and electric field cause spontaneous polarization changes to produce phase transition effects, the region from antiferroelectricity to ferroelectricity The research has always focused on the two aspects of phase transition behavior and energy conversion using the field-induced phase transition effect. [0003] In recent years, with the advancement of modern ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/01C04B35/48C04B35/462C04B35/457C04B35/622C04B35/624C04B35/64G01J5/10G01J1/42
Inventor 翟继卫
Owner TONGJI UNIV
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