The invention discloses an antiferroelectric film with adjustable working temperature zone and higher pyroelectric coefficient and a preparation method and application thereof. The antiferroelectric film (Pb,Nb)(Zr,Sn,Ti)O3 taken as the pyroelectric material is prepared by a sol gel method, the solute of precursor solution can be lead acetate, lanthanum acetate or niobium ethoxide, stannic acetate, zirconium isopropoxide and titanium isopropoxide, the solvent includes glacial acetic acid, ethylene glycol ethyl ether, acetylacetone and water, the final concentration of the precursor solution is controlled between 0.2-0.4 M, and the substrate comprises LaNiO3/Pt/Ti/SiO2/Si and Pt/Ti/SiO2/Si. The antiferroelectric film is high in thermally stimulated current and adjustable in temperature andcan be used for a pyroelectric infrared detector, a smart device and a system.