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Composite pyroelectricity material, preparation method thereof, and method for preparing silicon-base thick film

A composite material and pyroelectric technology, applied in thermoelectric devices, circuits, electrical components, etc., can solve the problems of low voltage response figure of merit, decrease of detection rate figure of merit, small dielectric constant, etc., and achieve high voltage response figure of merit , small dielectric constant and low film forming temperature

Inactive Publication Date: 2010-10-13
HUAZHONG UNIV OF SCI & TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although the pyroelectric coefficient is an order of magnitude lower than that of inorganic thin-film materials, due to the small dielectric constant and low thermal conductivity, the voltage response figure of merit of the device is not low, which is more suitable for the preparation of thin-film pyroelectric devices.
However, the pure organic thin film has a large dielectric loss, and its detection rate of excellence is seriously reduced.

Method used

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  • Composite pyroelectricity material, preparation method thereof, and method for preparing silicon-base thick film
  • Composite pyroelectricity material, preparation method thereof, and method for preparing silicon-base thick film
  • Composite pyroelectricity material, preparation method thereof, and method for preparing silicon-base thick film

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preparation example Construction

[0029] The preparation method of the above-mentioned composite pyroelectric material comprises the following steps:

[0030] (1) Preparation of lead scandium tantalate (PST) precursor sol. According to the chemical formula Pb 1+x (Sc 0.5 Ta 0.5 )O 3 To control the stoichiometric ratio (Ta+Sc) / Pb=1 / (1+x), 0.05≤x≤0.1, first dissolve scandium acetate in the solvent ethylene glycol methyl ether or ethylene glycol ether, according to 1:10~ Add catalyst concentrated nitric acid at a volume ratio of 1:20, stir until the solution becomes clear, then add tantalum ethoxide (Ta(OC 2 h 5 ) 5 ), stirred until clear to form ScTaO 4 (PST) precursor solution, then lead acetate is dissolved in the solvent ethylene glycol methyl ether or ethylene glycol ether, stirred to a clear solution, then the two solutions are mixed, stirred to form scandium lead tantalate precursor sol;

[0031] (2) Preparation of scandium lead tantalate nanopowder. Scandium lead tantalate precursor sol is stored...

Embodiment 1

[0044] (1) Scandium acetate (Sc(CH 3 COO) 3 ·yH 2 O) in the oven at a constant temperature of 120°C for 3 hours to remove the water of crystallization, get 11.1 grams and dissolve it in 65 milliliters of ethylene glycol methyl ether, and add 1 milliliter of concentrated nitric acid, stir until a clear solution, then add 20.3 grams of tantalum ethylate ( Ta(OC 2 h 5 ) 5 ), stirred for 2 hours to clarification, added 4 milliliters of triethanolamine as a stabilizing agent, then dissolved the lead acetate of 17.06 gram decrystallized water in 35 milliliters of ethylene glycol methyl ether, stirred to a clear solution, then mixed the two solutions, stirred for 3 hours to form scandium lead tantalate precursor sol;

[0045] (2) Bake the lead scandium tantalate precursor sol aged for 2 days at 120°C for 4 hours to obtain a dry gel, then grind the dry gel into powder, pass through a 200-mesh sieve, and then heat up at 200°C / h Raise the rate to 650°C and pre-fire for 3 hours, ba...

Embodiment 2

[0056] (1) Dissolve 11.1 grams of scandium acetate in 65 milliliters of ethylene glycol ether, add 1 milliliter of concentrated nitric acid, stir until the solution is clear, then add 20.3 grams of tantalum ethanol (Ta(OC 2 h 5 ) 5 ), stirred for 2 hours until clear, added 4 milliliters of triethanolamine as a stabilizer, then dissolved 17.06 grams of lead acetate in 35 milliliters of ethylene glycol ether, stirred to a clear solution, then mixed the two solutions, heated and stirred for 4 hours to form scandium tantalum Lead acid precursor sol;

[0057] (2) Dry the lead scandium tantalate precursor sol aged for 4 hours, pre-fire it at 800°C for 3 hours, ball mill and dry to obtain lead scandium tantalate nanopowder with a particle size of about 100nm;

[0058] (3) Dissolving 5 grams of PVDF powder in 95 grams of N,N-dimethylacetamide solution at 60°C;

[0059] (4) Pour the PVDF solution into the ceramic powder according to the PST volume fraction of 30%, and after stirring...

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Abstract

The invention discloses a composite pyroelectric material and a preparation method thereof as well as a method used in the preparation of a silica-based thick film. The material is a composite material of polyvinylidene fluoride and Pb1+x(Sc0.5Ta0.5)O3 nano ceramic powder, wherein x is more than or equal to 0.05 and less than or equal to 0.1; and the volume percent of the nano ceramic powder is 30 to 70 percent. The preparation method of the composite pyroelectric material and the silica-based thick film thereof comprises the following steps: (1) scandium lead tantanate precursor sol is prepared and scandium lead tantanate nano power is prepared by means of the sol; (2) PVDF solution and scandium lead tantanate PVDF composite slurry are prepared; (3) after the pretreatment of silicone substrate is completed, a thermal insulation layer and a bottom electrode are deposited; (4) the spin coating and the deposition of a composite pyroelectric thick film are completed; and (5) an upper electrode is deposited and polarized. The composite pyroelectric material, which has the advantages of both organic pyroelectric material and inorganic pyroelectric material, has a small dielectric constant, low thermal conductivity and very high voltage response optimal value; meanwhile, because film-forming temperature is extremely low, the material is suitable to be used in semiconductor integration process; moreover, the thickness of the composite pyroelectric thick film can be controlled within 5 micron and 20 micron, which ensures higher film-forming efficiency.

Description

technical field [0001] The invention belongs to the technical field of electronic materials and devices, and in particular relates to a composite pyroelectric material and a preparation method thereof, and a method for preparing a silicon-based thick film by using the composite pyroelectric material. Background technique [0002] The pyroelectric uncooled infrared detector has the operating frequency and the widest spectral response at room temperature (infrared to millimeter wave, by using a suitable black body coating to absorb radiation, the spectral response range can be further expanded), fast response speed, detection It has the characteristics of high efficiency, high integral sensitivity, etc., the preparation process is relatively simple, and the cost is low. It has a broad paramilitary and civilian market and is developing rapidly. [0003] At this stage, the method of thinning ferroelectric ceramic sheets is often used in the preparation of uncooled infrared focal...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C08L27/16C08K3/22H01L35/00H01L37/00
CPCY02P20/10
Inventor 姜胜林张海波钟南海曾亦可张光祖
Owner HUAZHONG UNIV OF SCI & TECH
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