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Antiferroelectric film with adjustable working temperature zone and higher pyroelectric coefficient and preparation method thereof

An antiferroelectric and pyroelectric technology, applied in the direction of electric radiation detectors, layered products, etc., can solve the problems of antiferroelectric thin film pyroelectric research, research and development, etc., and achieve large pyroelectricity. The effect of electric coefficient, broad market prospect and simple production process

Inactive Publication Date: 2010-03-17
TONGJI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, some critical phenomena in the phase transition of antiferroelectric thin films, especially the behavior of pyroelectricity, have not yet been deeply and systematically researched and developed.
[0007] At present, there are many studies on pyroelectric materials with phase transition between ferroelectric-paraelectric and ferroelectric-ferroelectric, but less research on pyroelectric effect of antiferroelectric-ferroelectric phase transition, and they are all concentrated in In antiferroelectric ceramic bulk materials, there is no report on pyroelectric research on antiferroelectric thin films.

Method used

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  • Antiferroelectric film with adjustable working temperature zone and higher pyroelectric coefficient and preparation method thereof
  • Antiferroelectric film with adjustable working temperature zone and higher pyroelectric coefficient and preparation method thereof

Examples

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Embodiment 1

[0026] p (Pb,Nb)(Zr,Sn,Ti)O 3 system, select Pb 0.99 Nb 0.02 (Zr 0.85 sn 0.13 Ti 0.02 ) 0.98 o 3 (PNZST) is in the region of the antiferroelectric orthorhombic system.

[0027] The chemical raw material used is lead acetate Pb(CH 3 COO) 2 ·3H 2 O, niobium ethanol Nb(OC 2 h 5 ) 5 , tin acetate Sn(CH 3 COO) 4 , zirconium isopropoxide Zr (OC 3 h 7 ) 4 and titanium isopropoxide Ti(OC 3 h 7 ) 4 , the solvent is glacial acetic acid, ethylene glycol ether and deionized water. First lead acetate Pb(CH 3 COO) 2 ·3H 2 O was weighed according to the stoichiometric ratio, a certain amount of glacial acetic acid was added, the molar ratio of Pb to glacial acetic acid was 1:10, heated to 110°C and refluxed for 1 hour; after cooling to room temperature, tin acetate Sn(CH 3 COO) 4 And continue to reflux for 1 hour; After cooling to room temperature, add ethylene glycol ether, niobium ethoxide Nb(OC 2 h 5 ) 5 , zirconium isopropoxide Zr (OC 3 h 7 ) 4 and titanium...

Embodiment 2

[0034] p (Pb,La)(Zr,Sn,Ti)O 3 system, select Pb 0.97 La 0.02 (Zr 0.75 sn 0.16 Ti 0.09 )O 3 (PLZST) is close to the antiferroelectric and ferroelectric phase boundary but in the antiferroelectric tetragonal phase region.

[0035] The chemical raw material used is lead acetate Pb(CH 3 COO) 2 ·3H 2 O, lanthanum acetate La(CH 3 COO) 3 ·H 2 O, tin acetate Sn(CH 3 COO) 4 , zirconium isopropoxide Zr (OC 3 h 7 ) 4 and titanium isopropoxide Ti(OC 3 h 7 ) 4 , the solvent is glacial acetic acid, ethylene glycol ether and deionized water.

[0036] First lead acetate Pb(CH 3 COO) 2 ·3H 2 O and lanthanum acetate La(CH 3 COO) 3 ·H 2 O was weighed according to the stoichiometric ratio, a certain amount of glacial acetic acid was added, the molar ratio of (Pb+La) to glacial acetic acid was 1:10, heated to 110°C and refluxed for 1 hour; after cooling to room temperature, tin acetate Sn(CH 3 COO) 4 And continue to reflux for 1 hour; After cooling to room temperature, a...

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Abstract

The invention discloses an antiferroelectric film with adjustable working temperature zone and higher pyroelectric coefficient and a preparation method and application thereof. The antiferroelectric film (Pb,Nb)(Zr,Sn,Ti)O3 taken as the pyroelectric material is prepared by a sol gel method, the solute of precursor solution can be lead acetate, lanthanum acetate or niobium ethoxide, stannic acetate, zirconium isopropoxide and titanium isopropoxide, the solvent includes glacial acetic acid, ethylene glycol ethyl ether, acetylacetone and water, the final concentration of the precursor solution is controlled between 0.2-0.4 M, and the substrate comprises LaNiO3 / Pt / Ti / SiO2 / Si and Pt / Ti / SiO2 / Si. The antiferroelectric film is high in thermally stimulated current and adjustable in temperature andcan be used for a pyroelectric infrared detector, a smart device and a system.

Description

[0001] This application is a divisional application of a Chinese patent application with an application date of December 29, 2005, an application number of 200510112416.3, and an invention title of: antiferroelectric thin film as a pyroelectric material and its preparation method and application. technical field [0002] The invention belongs to the technical field of preparing an antiferroelectric thin film with adjustable working temperature range and large pyroelectric coefficient by chemical method, its preparation method and application. Background technique [0003] The antiferroelectric state (AFE) of antiferroelectric materials can be transformed into ferroelectric state (FE) by the action of temperature, electric field and pressure. Since there are abundant structural phases near the phase boundary where antiferroelectricity transforms into ferroelectricity, and external fields such as temperature, stress and electric field cause spontaneous polarization changes to p...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B32B9/00C04B35/49C04B35/624G01J5/10
Inventor 翟继卫
Owner TONGJI UNIV
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