Stress strain-assisted pyroelectric composite material and application thereof
A technology of stress-strain and composite materials, applied in the direction of circuits, electrical components, semiconductor devices, etc., can solve the problem of small pyroelectric coefficient, achieve the effect of enhancing the change of electric polarization intensity, good application prospects, and improving the pyroelectric coefficient
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Embodiment 1
[0034] In this example, if figure 1 As shown, the stress-strain assisted pyroelectric composite material includes a stress-strain application layer 1, a lower conductive layer 2 located on the stress-strain application layer 1, a pyroelectric layer 3 located on the lower conductive layer 2, and a pyroelectric layer located on the Upper conductive layer 4 on layer 3.
[0035] The stress-strain application layer 1 is BaTiO 3 Single crystal, forms substrate support and provides stress-strain application function. The lower conductive layer 2 is SrRuO 3 film. Pyroelectric layer 3 is antiferroelectric Pb(ZrTi)O 3 film. The upper conductive layer 4 is metal Cu.
[0036] TiO 3 The single crystal forms the substrate support and provides the stress-strain application function.
[0037] SrO 3The thin film forms the lower conductive layer and has the function of transferring stress and strain, with a thickness of 10-100 nm, which is 16 nm in this embodiment.
[0038] Metal Cu f...
Embodiment 2
[0053] In this embodiment, the structure of the stress-strain assisted pyroelectric composite material is basically the same as in Embodiment 1, the difference is that in this embodiment, the pyroelectric layer 3 is antiferroelectric PbHfO 3 film.
[0054] The preparation method of the above-mentioned stress-strain assisted pyroelectric composite material is as follows:
[0055] (1) Antiferroelectric PbHfO 3 Target preparation
[0056] According to the chemical molecular formula, mix appropriate amount of PbO and HfO2 and grind evenly, and pre-fire at 800°C for 2 hours; after pre-burning, grind again, then press into a target, and fire at 1000°C for 2 hours to obtain antiferroelectric PbHfO 3 target.
[0057] (2) Film preparation
[0058] BaTiO 3 The single crystal substrate substrate is placed in a vacuum chamber, heated to 800°C, and then 10Pa oxygen is introduced, and the BaTiO 3 Deposition of SrRuO with a thickness of 16 nm on a single crystal substrate 3 thin film...
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