Pyroelectric unit infrared detector and production thereof

A pyroelectric infrared and detector technology, which is applied to thermoelectric devices with thermal changes in dielectric constant, electrical radiation detectors, etc. Electric coefficient, the effect of improving sensitivity

Inactive Publication Date: 2006-03-15
UNIV OF ELECTRONIC SCI & TECH OF CHINA
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Problems solved by technology

[0004] In order to obtain as thin as possible a high-performance sensitive unit medium and improve the utilization rate of materials, some people have introduced a casting process in the preparation of sensitive unit materials. However, due to the inherent defects of the casting process, one is that at least The organic slurry that adds and accounts for 30wt% will limit the compactness that diaphragm can reach, t

Method used

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  • Pyroelectric unit infrared detector and production thereof
  • Pyroelectric unit infrared detector and production thereof
  • Pyroelectric unit infrared detector and production thereof

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Embodiment Construction

[0027] After adding 0.5wt% Nd 2 o 3 , 1.0 wt% CeO 2 and 0.1wt% MnO 2 of (Ba 0.7 Sr 0.3 )TiO 3 Porcelain ceramic material, the diameter φ = 3.8mm, thickness d = 0.20mm porcelain pieces obtained by extrusion process, the porcelain pieces are sintered in the air at 1360°C, and then heat treated in a reducing atmosphere at 1000°C-1100°C for 1-2 hours , can obtain semiconducting ceramics with resistivity less than 2Ω·cm, semiconducting ceramics are properly oxidized in air at 900℃~1000℃, and under the action of 10v bias, the pyroelectric coefficient can be obtained greater than 2× 10 -7 C / cm 2 k pyroelectric infrared detector material, the typical dynamic pyroelectric voltage response curve of this material is as follows Figure 4 shown.

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Abstract

A unit pyroelectric infrared detector consists of top and bottom electrodes, BST ceramic semiconductor and BST ceramic oxide layer media wrapped outside of said semiconductor. It features that BST ceramic semiconductor is prepared by high temperature sintering and reduction heat treating ( Ba 0.7 Sr 0.3 ) TiO3 ceramic base material doped with 1 ¿C 5 wt % rare earth impurities with its thickness less than 0.20mn and resistance rate less than 10ª©.cm, BST ceramic oxide layer media is prepared by oxidizing surface of ceramic semiconductor with its thickness of 5 ¿C 10 micro m. The preparing method is also provided.

Description

technical field [0001] The invention belongs to the technical field of materials and components, and in particular relates to the structure and preparation of pyroelectric infrared detection devices. Background technique [0002] As we all know, pyroelectric infrared detectors can be widely used in industry, agriculture, environment, military, medical and other fields due to their characteristics of room temperature operation, wide response spectrum, convenient use and low cost. Pyroelectric infrared detectors working in dielectric mode represented by BST ferroelectric materials have attracted much attention because of their high detection figure of merit. [0003] Since the thickness of the sensitive unit medium used in the pyroelectric infrared detector is very thin, usually below 0.1mm, even if the most advanced ceramic technology is used to make the BST pyroelectric ceramic block, it will be processed after a series of complicated processes such as cutting and grinding. ...

Claims

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Application Information

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IPC IPC(8): G01J5/10H01L37/02
Inventor 张树人钟朝位张万里
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
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