Unlock instant, AI-driven research and patent intelligence for your innovation.

Esd protection circuit and semiconductor structure

A technology for electrostatic discharge protection and electrostatic discharge, which can be used in semiconductor devices, circuits, semiconductor/solid-state device components, etc., and can solve the problem of high resistance

Active Publication Date: 2009-10-14
TAIWAN SEMICON MFG CO LTD
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in addition to the generally known leakage current problem, the resistance of the diode string after it is turned on is still quite high.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Esd protection circuit and semiconductor structure
  • Esd protection circuit and semiconductor structure
  • Esd protection circuit and semiconductor structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0030] In order to make the above objects, features and advantages of the present invention more comprehensible, a preferred embodiment is specifically cited below, and is described in detail in conjunction with the accompanying drawings as follows:

[0031] figure 1 A cross-sectional view of a diode string in a conventional ESD protection circuit 100 is shown. The diode string is connected between a VDD pad 102 and another complementary VSS pad 104 . Diodes 106 , 108 , 110 , 112 , and 114 are all the same, and each diode has a P-type heavily doped region 116 and an N-type heavily doped region 118 , all placed in an N-type well 120 . In all diodes, the vertical direction produces a parasitic PNP transistor 122, the emitter is connected to the P-type heavily doped region 116, the base is connected to the N-type heavily doped region 118, and the collector is connected to VSS through the semiconductor substrate . The diodes 106 , 108 , 110 , 112 , and 114 are connected in seri...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention provides an electrostatic discharge protection circuit and a semiconductor structure for releasing electrostatic discharge current from a first pad to a second pad during an electrostatic discharge event. The circuit includes a plurality of bipolar junction transistors, which are sequentially coupled together in a base-to-emitter connection mode. The BJT includes a first BJT having an emitter coupled to the first pad; and a second BJT having an emitter coupled to the second pad pad for the base as well as the collector. The collector of the previous bipolar junction transistor is connected to the base of the subsequent bipolar junction transistor to assist in the turn-on of the bipolar junction transistor during an ESD event, so that the first solder A current path is provided between the pad and the second pad. Each BJT is an NPN BJT, or each BJT is a PNP BJT.

Description

technical field [0001] The present invention generally relates to integrated circuit design, and more particularly to electrostatic discharge (ESD) protection circuits in ICs. Background technique [0002] Because the bonding pad is used as a connection bridge between the external circuit and an IC, it is usually used for power supply or signal output / input, so ESD can enter the IC through the bonding pad. ESD can be generated in many ways. For example, when the external exposed part of the bonding pad of an IC is touched by a person, a person may generate considerable static electricity to damage the circuit in the IC. In metal-oxide-semiconductor (MOS) transistors, the gate oxide layer is generally the most fragile. As long as the cross voltage is slightly higher than the supply voltage, it may cause damage to the gate oxide layer. Under normal circumstances, the voltage caused by ESD may be as high as several thousand volts. And such a high voltage, although the amoun...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/02H01L23/60
CPCH01L27/0259
Inventor 黄绍璋
Owner TAIWAN SEMICON MFG CO LTD