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Transmitted electron microscope sample preparing method for step coverage detection

An electron microscope and sample technology, which is used in the preparation of transmission electron microscope samples, the field of transmission electron microscope sample preparation for step coverage inspection of barrier layers and seed layers, and can solve the problems of inability to accurately measure the actual thickness of the deposited seed layer, etc. To achieve the effect of accurate measurement

Inactive Publication Date: 2009-12-02
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In order to overcome the above-mentioned shortcoming that the actual thickness of the deposited seed layer cannot be accurately measured due to the agglomeration of the seed layer due to the operating conditions of the TEM sampling, the present invention is proposed

Method used

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  • Transmitted electron microscope sample preparing method for step coverage detection
  • Transmitted electron microscope sample preparing method for step coverage detection
  • Transmitted electron microscope sample preparing method for step coverage detection

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Embodiment Construction

[0016] In order to better understand the process of the present invention, the present invention will be further described below in conjunction with the accompanying drawings.

[0017] Such as figure 1 As shown, on the dielectric layer of the semiconductor substrate, the barrier layer and the seed layer are conventionally deposited by PVD.

[0018] A capping layer was then deposited in the same PVD system at 75°C to cover the seed layer. Such as image 3 shown.

[0019] Conventional TEM sample sampling steps such as epoxy sticking and hardening, focused ion beam (FIB) cutting and ion beam milling, etc. can then be performed.

[0020] Because the capping layer is placed over the seed layer and protects the seed layer from thermal agglomeration, the seed layer is not affected despite the heat generated during the sampling step of the electron microscope sample. The profile of the seed crystal layer of the scanning electron microscope sample prepared in this way is clear, an...

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Abstract

The disclosed preparation method for TEM sample for the barrier / seed ladder coverage check comprises: depositing barrier and seed layer on electronic medium of semiconductor substrate by PVD method, then depositing one coverage layer to prevent seed agglomeration; finally, sampling. This invention is fit to accurate measurement.

Description

technical field [0001] The invention relates to a preparation method of a transmission electron microscope sample, in particular to a preparation method of a transmission electron microscope sample used in the step coverage inspection of a barrier layer and a seed layer (Barrier / Seed) in a semiconductor integrated circuit manufacturing process. It belongs to the technical field of structural analysis of functional materials. Background technique [0002] With the continuous improvement of integrated circuit manufacturing process technology and the continuous reduction of device line width, the harm of defects in silicon materials cannot be ignored more and more. In the modern VLSI process, the feature size of the device is getting smaller and smaller, and the integration level is getting higher and higher. In the current semiconductor integrated circuit process, defects on the microscopic scale have become very important. The existence of defects will affect the local phys...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01N1/06G01N1/28G01N13/00
Inventor 牛崇实高强张启华吴廷斌
Owner SEMICON MFG INT (SHANGHAI) CORP