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Wavelength or long wavelength optical contact approach nanometer photoetching optical apparatus

A nano-lithography and long-wavelength technology, which is applied in micro-lithography exposure equipment, photolithography process exposure equipment, optics, etc., can solve the problems of complex technology and expensive investment, and reduce production costs, technical difficulties and equipment costs Effect

Inactive Publication Date: 2010-01-13
INST OF OPTICS & ELECTRONICS - CHINESE ACAD OF SCI
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Problems solved by technology

These methods all require extremely short-wavelength light source electromagnetic radiation system and optical system, which are technically very complicated, and the investment is also very expensive. Only economically developed countries and powerful large companies conduct research and development.

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  • Wavelength or long wavelength optical contact approach nanometer photoetching optical apparatus
  • Wavelength or long wavelength optical contact approach nanometer photoetching optical apparatus
  • Wavelength or long wavelength optical contact approach nanometer photoetching optical apparatus

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Embodiment Construction

[0012] Such as figure 1 As shown, the present invention consists of a general-wavelength or long-wavelength laser light source 3, mirror group one 2, reflector 1 and mirror group two 4 to form an illumination system. A metal mask 5 is placed at the uniform illumination position of the illumination system and then touched and approached. The silicon wafer 7 on which the resist coating 6 is placed, generally the wavelength of the long-wavelength or laser light source 3 is 193-1000 nm, the first lens group 2 has a focusing function, and the second lens group 4 has a focusing beam expanding and collimating function. Laser light of any wavelength with a wavelength of 193-1000nm emitted by the general wavelength or long-wavelength laser source 3 is focused by the first mirror group 2, reflected by the mirror 1, and the second mirror group 4 is expanded and collimated, and uniformly illuminates the metal mask 5 On the ultra-fine pattern surface of the metal mask 5, light is emitted fro...

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Abstract

A device which is composed of light source, lens sets and reflector is characterized as the follows, laser is normal wavelength of long wavelength laser, lens sets are uniform lightening lens of focused spread beam in collimation, mask is metal mask which is placed at uniform lightening position and has distance of 0.005-1000 micron m to high resolution ratio resist layer below it. The present invention uses laser in wavelength of 193-1000 nm to shine metal mask for exciting plasma at surface of metal mask to outshoot small diverging angle light used for photoetching through plasma wave propagation.

Description

Technical field [0001] The invention is a general wavelength or long-wavelength optical contact approaching nano-lithography optical device, belonging to the technical field of contact approaching lithography exposure for making nano devices by micro-processing technology. Background technique [0002] Due to the rapid development of global communication technology and high-tech information technology, there is an urgent need for microfabrication technology to produce ultra-high-speed, ultra-high-frequency nano-scale IC devices, and the production of nano-patterned structures needs to greatly improve the resolution of existing lithography technology. Because of the limitation of the diffraction limit, generally, when the mask pattern hole size is much smaller than the wavelength of the nano-level hole and the slit pattern, the light cannot pass through, and the photolithography cannot be used to make the nano pattern. Therefore, the methods of shortened wavelength lithography are...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/20H01S5/00G03F7/00
Inventor 陈旭南罗先刚田宏石建平
Owner INST OF OPTICS & ELECTRONICS - CHINESE ACAD OF SCI
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