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Magnetic memory cell structure and magnetic memory device

A technology of magnetic storage and cell structure, applied in information storage, static storage, digital storage information, etc., can solve the problems of reduced write operation current, operation failure, and increased direct operation area.

Inactive Publication Date: 2010-03-10
IND TECH RES INST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0010] The present invention further explores the above-mentioned Figure 9 found that, although the two-state operating region is pulled toward magnetic field zero by applying a magnetic field bias 184, it also causes an increase in the direct operating region
If the direct operation area crosses the zero point of the magnetic field, it will also cause operation failure
Therefore, the direct operation area will also limit the reduction of write operation current

Method used

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  • Magnetic memory cell structure and magnetic memory device
  • Magnetic memory cell structure and magnetic memory device
  • Magnetic memory cell structure and magnetic memory device

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Embodiment Construction

[0076] Bearing the foregoing, the present invention is Figure 9 After further research on the conventional technology, it is found that although the dual-state operation area is pulled toward the zero point of the magnetic field by applying the magnetic field bias 184, it will also increase the direct operation area at the same time, so that the writing operation current cannot be further reduced. The following will first describe the research of the present invention on the traditional technology, find out some possible reasons, and therefore also propose solutions. Some examples are given to describe the present invention, but not to limit the scope of the present invention.

[0077] Figure 10 Experimental results showing phenomena produced according to conventional techniques are shown. refer to Figure 10 , the upper figure is a schematic diagram of the structure of a conventional magnetic memory cell, including a magnetically fixed laminated layer 192 and a magnetica...

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Abstract

The invention relates to a magnetic storage device with a magnetic storage unit structure suitable for double-state mode accessing operation, the magnetic storage device comprises a magnetic fixed laminated layer as a portion of a basic layer structure, a tunnel insulative layer positioned on the magnetic fixed laminated layer, a magnetic free laminated layer positioned on the tunnel insulative layer, a magnetic bias laminated layer positioned on the magnetic free laminated layer. Wherein the magnetic bias laminated layer provides a bias magnetic field to the magnetic free laminated layer so that a double-state operation region is approached to a zero-point of the magnetic field. In addition, actions of the magnetic field generated by the magnetic bias laminated layer also comprise reducing a direct region adjacent to the double-state operation region.

Description

technical field [0001] The present invention relates to a magnetic memory technology, and in particular to a structure of a magnetic memory cell that can operate at low drive current. Background technique [0002] Magnetic memory, such as magnetic random access memory (Magnetic Random Access Memory, MRAM) is also a kind of non-volatile memory, which has the advantages of non-volatility, high density, high read and write speed, and radiation resistance. The data of 0 or 1 is recorded by using the magnetization vector of the magnetic substance adjacent to the tunneling insulating layer, and the magnitude of the magnetoresistance generated by the parallel or antiparallel arrangement. When writing data, the general method used is two current lines, such as the magnetic memory cell structure selected by the intersection of the magnetic field induced by the bit line (Bit Line, BL) and the write word line (WWL). , by changing the direction of the magnetization vector of the free l...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C11/15G11C11/16
Inventor 李元仁洪建中高明哲
Owner IND TECH RES INST