Non-volatile memory device, and manufacturing method and programming method thereof
A technology of non-volatile storage and manufacturing method, applied in the field of non-volatile storage devices
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[0029] Now, specific embodiments according to the present invention will be described with reference to the accompanying drawings.
[0030] 2A to 2E are cross-sectional views illustrating a method of manufacturing a nonvolatile memory device according to an embodiment of the present invention.
[0031] Referring to FIG. 2A , a plurality of selection lines DSL and SSL and word lines WL0 to WLn are formed on a semiconductor substrate 100 . A junction region 212j, a drain 212d, and a source 212s are formed between the select line and the word line. More specifically, a plurality of word lines WL0 and WLn are formed between the drain selection line DSL and the source selection line SSL. A drain 212d to be connected to a bit line is formed in the semiconductor substrate 200 between the drain selection lines DSL, and a source 212s is formed in the semiconductor substrate 200 between the source selection lines SSL.
[0032] Meanwhile, each of the selection lines DSL and SSL and the...
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Abstract
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