Non-volatile memory device, and manufacturing method and programming method thereof

Abstract

This invention discloses a non-volatile memory device, producing and programm method thereof. A non-volatile memory device includes a plurality of select lines and a plurality of word lines formed over a semiconductor substrate, a contact plug formed between the select lines, and a conductive interference shielding line formed between the select line and a word line adjacent to the select line and isolated from the semiconductor substrate.

Description

technical field [0001] The present invention generally relates to a nonvolatile memory device, and more particularly, to a nonvolatile memory device, a method of manufacturing the same, and a programming method thereof, wherein the threshold bias voltage of an unprogrammed memory cell ( bias) can be minimized. Background technique [0002] A nonvolatile memory device has a characteristic that stored data will not be erased even if power is turned off. Typical non-volatile storage devices include flash memory devices. Flash memory devices may be classified into NOR flash memory devices and NAND flash memory devices according to the structure of a memory cell array. [0003] Among them, the NAND flash memory device includes a memory cell array as a basic module unit. Each module has multiple strings. A string includes select transistors and memory cells. In more detail, the string includes a drain selection transistor connected to a bit line, a source selection transistor...

AI Technical Summary

Problems solved by technology

Due to the capacitive coupling of the parasitic capacitor C100, the threshold voltage Vth will vary even in the selection transistor and the memory cell, so this will create certain problems

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