Method for preparing power-micro structure LED tube core utilizing flip chip technology

Abstract

This invention relates to a method for processing cores of power-like microstructure LED by a flip technology including the following steps: 1, growing an epitaxial layer structure on a sapphire substrate, 2, etching a round desk on the epitaxial layer structure, 3, processing n type meshed Ohm contact electrode and electrode solder points, 4, depositing SiO2 or SiN4 insulation layer on the top surface of the device structure, 5, eroding the insulation layer on the top surface of the round desk, 6, depositing p-type thickened high reflection rate metal electrode on the top surface of the device except the electrode solder points, 7, etching to erode the insulation layer on the n electrode solder points, 8, thinning the back of the sapphire substrate to cut it to single core structures, 9, depositing a medium layer on the silicon support body, 10, flip-soldering the core structure and the Si supporting body via the convex points, 11, cutting it to form a core of a LED.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular refers to a method for manufacturing a power-type microstructure light-emitting diode tube core by flip-chip technology. Background technique [0002] Gallium nitride-based compound semiconductors mostly use quantum wells and heterojunction structures as the active area of ​​light-emitting diodes. This light-emitting diode has the advantages of good reliability, high efficiency, long life, and energy saving. It is used in large-screen displays, indications, and liquid crystal displays. , the field has broad application prospects, especially the combination of gallium nitride-based purple and blue light-emitting diodes with phosphors can produce visually white light-emitting diodes, which can be used for daily lighting. In order to meet the requirements of future lighting, the luminous efficiency of light-emitting diodes still needs to be further improved. The size of tra...

AI Technical Summary

Problems solved by technology

At present, the production of micro-structure light-emitting diodes mainly adopts the positive structure, and it is difficult to realize the interconnection of P electrodes. Generally, microporous structures are made, but this structure cannot realize the interconnection of n electrodes, and the uniformity of current expansion is relatively poor. The turn-on voltage of the device is also relatively high

The microstructure light-emitting diodes used in microdisplays generally use horizontal and vertical wiring to realize the interconnection of p and n electrodes respectively, but the width of the electrode connection is only about ten microns, and the length is close to 1mm. In order to avoid blocking and absorbing light , the electrode should not be too thick, so the lead resistance is relatively large, and the reliability is relatively poor

In addition, this wiring method needs to reserve a large area of ​​solder joints on the chip, sacrificing a large area of ​​active area, and is not suitable for making power-type light-emitting diodes.

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