High output small area group III nitride LED

A technology with high output and area, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as reducing radiation flux and increasing forward voltage
CN101027783AActive Publication Date: 2007-08-29CREE HUIZHOU SOLID STATE LIGHTING
1 Cites 3 Cited by

Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
CREE HUIZHOU SOLID STATE LIGHTING
Publication Date
2007-08-29

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

A high efficiency Group III nitride light emitting diode is disclosed. The diode includes a substrate selected from the group consisting of semiconducting and conducting materials, a Group III nitride-based light emitting region on or above the substrate, and, a lenticular surface containing silicon carbide on or above the light emitting region.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The present invention relates to light emitting diodes (LEDs), and more particularly to LEDs formed from active portions of group III nitrides on silicon carbide substrates. Background technique lighting technology

[0002] Lighting devices for many applications can be divided into several broad categories. Incandescent lighting is produced by heating a metal filament, usually by passing an electric current through it. The heated filament emits light. Home and other indoor lighting typically utilizes incandescent lighting. "Halogen" lighting works on the same general principle, but with greater efficiency. Fluorescence is produced by exciting (usually mercury-containing) vapors by an applied potential difference. Photons emitted by the excited vapor emit visible light after being incident on the phosphor. Fluorescence is also prevalent in homes, offices, and various other applications. led

[0003] Light emitting diodes (LEDs) are p-n junc...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More