Plasma source for uniform plasma distribution in plasma chamber

A plasma source and plasma technology, applied in the field of plasma chambers, can solve the problems of magnetic field deviation, difficult to control the etching rate of critical scale, etc., and achieve the effects of preventing magnetic field deviation, enhancing selectivity, and uniform CD distribution

Inactive Publication Date: 2007-09-19
ADAPTIVE PLASMA TECH
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  • Summary
  • Abstract
  • Description
  • Claims
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Problems solved by technology

However, conventional plasma sources have the problem that they suffer from a magnetic field deviation from the center to the outer edges of the plasma source, resulting in difficulty in controlling critical dimensions and uniform etch rates especially at the center and outer edges of the plasma source

Method used

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  • Plasma source for uniform plasma distribution in plasma chamber
  • Plasma source for uniform plasma distribution in plasma chamber
  • Plasma source for uniform plasma distribution in plasma chamber

Examples

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Embodiment Construction

[0066] Preferred embodiments of the present invention will be described with reference to the accompanying drawings.

[0067] 3 is a plan view showing a plasma source according to a first embodiment of the present invention, and FIG. 4 is a cross-sectional view showing the plasma source of FIG. 3 .

[0068] Referring to FIGS. 3 and 4 , the plasma source 210 of the first embodiment includes a liner 211 , a middle source coil 213 , an edge source coil 214 , and a plurality of linear source coils 212 . The bushing 211 is formed of a conductive material, and, although not shown in the drawing, the bushing 211 is located at the upper center of the reaction chamber. The bushing 211 has a protrusion 211 - 1 at the center of the bushing 211 to transmit RF power from an external RF power source (not shown) to the bushing 211 . The linear source coil 212 extends linearly from the edge of the liner 211 to the upper edge of the reaction chamber. Since the bushing 211 is electrically con...

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Abstract

Disclosed herein is a plasma source which can create plasma within a reaction chamber to process a semiconductor wafer. The plasma source comprises a bushing equipped at an upper center of the reaction chamber, and a plurality of source coils linearly extending from the bushing to a periphery of the reaction chamber. With the linear source coils, it is possible to prevent deviation in magnetic field from the center to the periphery of the plasma source in the radial direction, resulting in easy control of critical dimensions and uniform etching rate both at the center and periphery of the reaction chamber.

Description

technical field [0001] The present invention relates to plasma chambers, and more particularly to plasma sources for uniform plasma distribution in plasma chambers. Background technique [0002] During the last 20 years, the technology for fabricating very large scale integrated circuit devices has developed significantly. These developments can be realized by semiconductor manufacturing devices that can support processes requiring advanced technologies. A plasma chamber which is one of such semiconductor manufacturing apparatuses has been broadened in its application, for example, is now used for a deposition process as well as an etching process. [0003] A plasma chamber is a semiconductor manufacturing device in which plasma is generated, and a process such as an etching process or a deposition process is performed using the plasma. The plasma chamber can be classified according to the plasma source into electron cyclotron resonance plasma (ECRP) source chamber, helico...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02
CPCH01J37/321H01L21/02
Inventor 金南宪
Owner ADAPTIVE PLASMA TECH
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