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Nonvolatile storage device and data writing method thereof

A technology for non-volatile storage and data writing, applied in memory systems, electrical digital data processing, memory architecture access/allocation, etc.

Inactive Publication Date: 2007-09-26
PANASONIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0025] However, defragmentation in the "rewrite method with backoff processing" and the "append-type rewrite method" takes a long time, and the operation speed of the nonvolatile memory element will decrease if the number of times defragmentation is performed is large.

Method used

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  • Nonvolatile storage device and data writing method thereof
  • Nonvolatile storage device and data writing method thereof
  • Nonvolatile storage device and data writing method thereof

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Experimental program
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no. 1 Embodiment approach

[0089] The nonvolatile memory device according to this embodiment stores at least one page of sector-unit data input from the access device in the auxiliary memory, and writes to the main memory in page units. Thus, the number of times of writing can be reduced. As a result, the generation of invalid pages can be reduced, so the number of times of defragmentation can be reduced, and the operation speed can be improved.

[0090] First, the configuration of the nonvolatile memory device according to the first embodiment of the present invention will be described.

[0091] FIG. 2 is a block diagram showing the configuration of a nonvolatile memory system according to the first embodiment of the present invention. The nonvolatile storage system shown in FIG. 2 includes a nonvolatile storage device 110 and an access device 100 .

[0092] The access device 100 sends a read or write command of user data (hereinafter simply referred to as data) in units of sectors to the nonvolatile...

no. 2 Embodiment approach

[0129] In the nonvolatile memory device according to the second embodiment, when data of the same logical address is stored in the buffer memory 122, new data is overwritten in an area where old data is stored. Thus, the capacity of the buffer memory 122 can be effectively used.

[0130] 10 is a flowchart of a write process of the nonvolatile memory device according to the second embodiment. In addition, since the structure of the nonvolatile memory device of the second embodiment is the same as that of FIG. 2 , description thereof will be omitted.

[0131] As shown in FIG. 10 , in the writing process of the nonvolatile memory device according to the second embodiment, in step S902, when there is data with the same logical sector address in the buffer memory 122 (No in S902), the The difference from the first embodiment is that the data for one sector newly input from the access device and the logical sector address are overlaid on the area (S906) of the buffer memory 122 in ...

no. 3 Embodiment approach

[0140] The nonvolatile storage device according to the third embodiment includes a notification unit that notifies the CPU 121 that the buffer memory 122 is full. Thereby, the processing of CPU121 can be reduced.

[0141] FIG. 12 is a block diagram showing the configuration of a nonvolatile memory system according to a third embodiment. In addition, the same code|symbol is attached|subjected to the same element as FIG. 2, and detailed description is abbreviate|omitted.

[0142] The nonvolatile memory device 110 according to the third embodiment shown in FIG. 12 is different from the first embodiment shown in FIG. 2 in that the memory controller 120 includes a notification unit 124 . The notification unit 124 is constituted by hardware, judges whether or not the buffer memory 122 is full, and notifies the CPU 121 of the judgment result. CPU 121 controls memory control unit 123 based on the determination result notified by notification unit 124 to write the data stored in buff...

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Abstract

A nonvolatile storage device according to the invention is a nonvolatile storage device into which data is inputted from an external device on a sector unit, and includes: a main memory which is nonvolatile and in which data is written on a page unit, the page unit being larger than the sector unit; an auxiliary memory which holds at least a single page worth of the input data; a memory judging unit that judges whether or not data held in the auxiliary memory is equal to or larger than data of the page unit; and a memory control unit that writes, in a new page of the main memory on the page unit, the data held in the auxiliary memory when the memory judgment unit judges that the data held in the auxiliary memory is equal to or larger than data of the page unit.

Description

technical field [0001] The present invention relates to a nonvolatile storage device and a data writing method of the nonvolatile storage device, and particularly relates to an auxiliary memory and a main memory for writing in page units, and to input a sector unit smaller than a page unit. Non-volatile storage of data. Background technique [0002] The demand for nonvolatile storage devices including a rewritable nonvolatile main memory is increasing, centering on semiconductor memory cards. There are various types of semiconductor memory cards, and one of them is an SD memory card (registered trademark). [0003] FIG. 1 is a block diagram showing the configuration of a nonvolatile storage system including a conventional nonvolatile storage device. The nonvolatile storage system shown in FIG. 1 includes an access device 100 such as a digital still camera or a personal computer, and a nonvolatile storage device 1110 . [0004] The nonvolatile storage device 1110 is, for e...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F12/00
CPCG06F12/0246G06F2212/7203G06F2212/7205
Inventor 松浦正则五宝靖岩成俊一德光伸一中西雅浩
Owner PANASONIC CORP