Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Self-clean film material and preparation method

A thin-film material and self-cleaning technology, applied in metal material coating process, paper coating, fiber raw material processing, etc., can solve the problems of difficulty in depositing fluorocarbon film, high vacuum cost, etc., achieve far-reaching use value, low equipment cost, high flow rate low effect

Inactive Publication Date: 2010-10-13
刘东平
View PDF8 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Research in this area is still relatively lacking in our country. At present, we only found that some researchers used magnetron sputtering to deposit FC films with a diamond-like film structure, intending to prepare protective films with higher hardness, but no large According to reports on area deposition, it is difficult to deposit large-area fluorocarbon films on glass and paper due to the high cost of vacuum using traditional plasma deposition
So far, there have been no reports on the large-scale deposition of fluorocarbon films on insulating materials such as glass and paper, and the deposition of such films by dielectric barrier discharge.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Self-clean film material and preparation method
  • Self-clean film material and preparation method
  • Self-clean film material and preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] prepared as figure 1 The self-cleaning film paper shown in figure 2 In the deposition device of the fluorocarbon film shown, the two symmetrical vacuum chambers 6 separated by the insulating material glass 1 are equipped with exhaust ports 8, and the high-voltage electrodes 2 and the ground electrodes 3 are respectively installed in the vacuum chambers, and the paper 7 is placed in Between the high-voltage electrode and the ground electrode, the paper is in contact with the surface of the ground electrode or the paper is placed on the glass, and there is a gap between the paper and the high-voltage electrode. There is an air inlet hole 9 on the vacuum chamber with the ground electrode.

[0020] When depositing fluorocarbon film on paper, the high-voltage power supply is connected to the high-voltage electrode by wire 4 to provide AC near-sine wave high voltage. The peak-to-peak voltage must reach more than 20kV, and the frequency is 1KHz. There are two symmetrical vac...

Embodiment 2

[0022] Adopt the equipment described in embodiment 1 to carry out fluorocarbon film deposition on the glass surface, the high-voltage power supply is connected to the high-voltage electrode by the wire 4 to provide the AC near sine wave high voltage, the peak-to-peak voltage must reach more than 30kV, the frequency is 2KHz, and the two sides of the glass 1 are provided by two The exhaust ports of two symmetrical vacuum chambers are connected to a mechanical pump at the same time. When exhausting, the two vacuum chambers must be exhausted at the same time to avoid the glass from being broken due to pressure imbalance on both sides. Before discharging, the cut-off valve 10 must be closed to prevent the high-voltage electrode from generating plasma in the exhaust port. Before deposition, use helium as the discharge gas, which is fed through the gas inlet 9, and discharge treats the glass surface for about 10 minutes, so as to improve the adhesion between the substrate surface and ...

Embodiment 3

[0024] Adopt the equipment described in embodiment 1 to carry out fluorocarbon film deposition on polyester surface, high-voltage power supply is connected with high-voltage electrode by wire and provides alternating current near sine wave high voltage, and the peak-to-peak voltage must reach more than 30kV, frequency 2KHz, polyester both sides by two The exhaust ports of two symmetrical vacuum chambers are connected with a mechanical pump at the same time. When exhausting, the two vacuum chambers must be exhausted at the same time to prevent the two sides of the polyester from being broken due to pressure imbalance. Before discharging, the cut-off valve must be closed to prevent the high-voltage electrode from generating plasma in the exhaust port. Before deposition, use argon as the discharge gas, pass it through the gas inlet, and discharge the polyester surface for about 8 minutes, so as to improve the adhesion between the substrate surface and the film. then use C 2 f 6...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
contact angleaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

A self-cleaning film material with high hydrophobicity and high resistance to dirt and corrosion is composed of a substrate (paper, etc) and a F-C film deposited on the surface of substrate. Its preparing process is also disclosed.

Description

technical field [0001] The present invention relates to materials with thin films, and also to methods for their preparation. Background technique [0002] The plasma-deposited fluorocarbon polymer film has excellent hydrophobicity, extremely low dielectric constant (1.8-2.1) and biocompatibility. This fluorocarbon film will have important applications as an environmentally friendly self-cleaning protective film, large-scale integrated circuits, and biocompatible materials. In the past ten years, the use of plasma to prepare fluorocarbon thin films has set off a global upsurge. At present, dozens of research groups in the world are conducting research work in this area. Research in this area is still relatively lacking in our country. At present, we only found that some researchers used magnetron sputtering to deposit FC films with a diamond-like film structure, intending to prepare protective films with higher hardness, but no large According to reports on area deposition...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C03C17/22C23C14/06C23C14/38C23C14/36C23C14/02D21H19/00
Inventor 刘东平
Owner 刘东平
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products