Schottky part and semiconductor making process for making same

Abstract

The present invention provides a Schottky element and its semiconductor manufacturing process. The Schottky element comprises a substrate, a deep well, a Schottky contact, and an Ohmic contact. The substrate is doped with type I ion. The deep well zone is doped with type II ion and formed in the substrate. The Schottky contact contacts a first electrode with the deep well. The Ohmic contact contacts a second electrode with a heavily doped zone containing type II ion in the deep well. Wherein, the deep well zone has a geometry gap formed under the Schottky and containing a transverse size, the type I ion and the type II ion are complemented, and the transverse size is for adjusting the electric breakdown strength.

Description

technical field [0001] The present invention relates to a Schottky element and a semiconductor process for manufacturing the Schottky element; more specifically, it relates to a semiconductor process for manufacturing a Schottky element with a high breakdown voltage. Background technique [0002] Schottky elements are widely used in many semiconductor circuits. Please refer to FIG. 1 and FIG. 2. FIG. 1 is a top view of a conventional Schottky element 1, and FIG. 2 shows a partial side view of the Schottky element 1 taken along the section line A-A of FIG. 1. Sectional view. Schottky element 1 includes a P-type substrate 101, an N-type deep well region 103, a heavily doped region 105 doped with N-type ions, a Schottky junction (contact) 107, an Ohmic (Ohmic) junction surface 109 , a doped region 111 doped with P-type ions, a Schottky electrode 113 and an ohmic electrode 115 . The Schottky junction 107 makes the Schottky electrode 113 contact with the N-type deep well regio...

AI Technical Summary

Problems solved by technology

[0003] However, in order to increase the breakdown voltage in the Schottky element 1, the ion concentration in the N-type deep well region 103 will decrease

Therefore, the production of the Schottky element 1 will require many additional photomasks and processes, resulting in a relatively high cost

In addition, the conduction resistance of the Schottky element 1 will also increase relatively

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