Silicon carbide semiconductor device and manufacturing method thereof

A manufacturing method and semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as difficulty in reducing channel resistance, difficulty in further reducing on-resistance, and improving MOS channel mobility, etc.

Inactive Publication Date: 2007-10-24
FUJI ELECTRIC HLDG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For these reasons, according to the aforementioned SiO 2 The improvement of MOS channel mobility at / SiC is difficult
This leads to the current situation where the difficulty of reducing the channel resistance (the largest component of the total on-resistance) makes it difficult to further reduce the on-resistance

Method used

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  • Silicon carbide semiconductor device and manufacturing method thereof
  • Silicon carbide semiconductor device and manufacturing method thereof
  • Silicon carbide semiconductor device and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0043] In Example 1, a method of manufacturing an n-type SiC-MOS capacitor according to the present invention will be described. The change in conductivity type allows p-type SiC-MOS capacitors to be fabricated in the same manner as in Example 1 explained below. Furthermore, devices such as n-channel or p-channel MOSFETs can be easily manufactured by forming components such as source, drain, and gate electrodes using known methods.

[0044] First, prepare an alumina boat. Upstream from this boat, a SiC pseudo-substrate (not necessarily single crystal) is placed on which 5 mm thick SiO 2 . The width of the dummy substrate sample to the gas flow is taken to be at least wider than the width (50.8 mm in diameter) of the SiC substrate sample to be initially processed described later, eg, a 55 mm square. Downstream from the boat, SiC substrate samples were set up for fabrication of n-type SiC-MOS capacitors according to the present invention.

[0045] In Example 1, for a sample ...

example 2

[0058] In Example 2, a method of manufacturing an n-type SiC-MOS capacitor according to the present invention will also be explained. As in Example 1, modification of the conductivity type of the SiC substrate of course allows the formation of p-type MOS capacitors and n-channel or p-channel MOSFETs. In the following, the differences from Example 1 are especially emphasized for explanation.

[0059] In Example 2, a double tube of quartz glass was used for the heat treatment system. This system has a structure in which cooling water is made to flow between an outer tube and an inner tube of a double tube. According to the present invention with SiO formed thereon 2 SiC substrate samples and dummy samples were mounted on polycrystalline SiC-coated high-purity graphite susceptors. The susceptor is set on a susceptor holder of quartz glass with a thick pad of high-purity porous graphite placed therebetween so that the susceptor is not in direct contact with the double tube of q...

example 3

[0064] In Example 3, a method of manufacturing an n-type capacitor according to the present invention was explained. As in Examples 1 and 2, p-type MOS capacitors and n-channel or p-channel MOSFETs can be formed. In Example 3, the differences from Examples 1 and 2 are especially emphasized.

[0065] The heat treatment system used in Example 3 is a system in which a hollow heat insulator of high-purity graphite is placed in a reaction tube of quartz glass of a SiC epitaxial growth system and a high-purity graphite susceptor coated with polycrystalline SiC is disposed inside the heat insulator, as SiO for use according to the present invention 2 The heat treatment system is provided. The graphite susceptor is grooved horizontally. Along this groove, a polycrystalline SiC substrate is placed. On the polycrystalline SiC substrate, a SiC substrate sample and a dummy substrate according to the present invention were mounted (the dummy substrate was mounted upstream). The graphi...

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Abstract

A method of manufacturing a device on a silicon carbide substrate is disclosed. The device includes an oxide layer which has silicon oxide as a main component on the silicon carbide semiconductor substrate. The method includes depositing and oxide layer on a surface of the silicon carbide semiconductor substrate; raising a temperature of the oxide layer in a non-oxidizing atmosphere to a temperature bringing the oxide layer into a liquefied state; and then rapidly cooling the oxide layer down to a temperature equal to or less than 1140 DEG C. to form the oxide layer including silicon oxide as a main component. The silicon carbide semiconductor device has improved channel mobility to lower on-resistance by decreasing an interface state density at an interface between the oxide insulator film that has silicon oxide as its main component and the silicon carbide semiconductor substrate.

Description

technical field [0001] The present invention relates to silicon carbide semiconductor devices formed into devices such as MOSFETs (Insulated Gate Metal Oxide Semiconductor Field Effect Transistors), IGBTs (Insulated Gate Bipolar Transistors), bipolar transistors, or diodes using a silicon carbide semiconductor substrate, and The method of fabrication of the device. Background technique [0002] It has been reported that high breakdown voltage power devices fabricated using silicon carbide (SiC) semiconductor substrates have the potential to significantly reduce the on-resistance of the devices. In the last few years, MOSFETs of SiC in the 1.2 to 1.7kV class have achieved less than 10mΩcm 2 low on-resistance. This is lower than the on-resistance of a silicon (Si) IGBT of the same breakdown voltage class. However, at present, although on-resistance can be reduced, it can only be reduced to a still insufficient level, and there is a possibility of further reduction. Further...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/316H01L29/51H01L29/78
CPCH01L29/66068H01L29/0878H01L29/7813H01L29/6606H01L21/049H01L29/7802H01L29/42368H01L29/1608H01L21/3105
Inventor 中村俊一米泽喜幸
Owner FUJI ELECTRIC HLDG CO LTD
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