Method for repairing light mask image

A photomask and graphics technology, which is applied to the photoplate-making process of the pattern surface, the original for photomechanical processing, optics, etc., can solve the problems of increased cost of the photomask, unusable photomask, inaccurate positioning, etc., to achieve Increased repair probability, reduced production costs, and accurate positioning

Inactive Publication Date: 2008-01-16
SEMICON MFG INT (SHANGHAI) CORP +1
View PDF0 Cites 11 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] The problem solved by the present invention is to provide a method for repairing the pattern of the photomask to prevent inaccurate positioning when repairing the defective pattern, and because no suitable non-defective pattern can be found within the range of the viewing window as a reference pattern to repair the defective pattern, resulting in the Masks are unusable and must be re-fabricated, resulting in higher mask costs

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for repairing light mask image
  • Method for repairing light mask image
  • Method for repairing light mask image

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0031] During the production process of the photomask, because the photomask is contaminated with a little particle in the environment, the uneven exposure energy or the problem of the resist material are easy to produce defect patterns. In the prior art, the positioning is not accurate when repairing the defect pattern, and because no suitable defect-free pattern can not be found within the window range as a reference pattern to repair the defect pattern, the fabricated photomask is unusable and must be remade, causing the photomask Increased costs. The invention repairs the defective pattern on the photomask by enlarging the range of finding the non-defective pattern with the same shape and size as the defective pattern and gradually outputting the reference pattern to the direction of the defective pattern by the repairing instrument. The specific embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0032] ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

The invention discloses the method of mending photo mask graph; the original reference pattern which is in the same X axle and the same Y axle of defect pattern and has the same size of the defect pattern is found on a photo mask base board by software; reference pattern is collected and output by the way that Window is mended and defect pattern direction is gradually closed to, which makes the positioning of the defect pattern is relatively accurate; furthermore, the scope of non-defect pattern with the same size of the defect pattern is widened; the probability of finding the non-defect original reference pattern with the same size of defect pattern is increased; the non-defect original reference pattern is copied and taken as the reference pattern; the defect pattern is mended by the way that the reference pattern is referred to, which eliminates the requirement of remanufacturing the photo mask and reduces the production cost of the photo mask.

Description

technical field [0001] The invention relates to a method for making a photomask, in particular to a method for repairing photomask patterns. Background technique [0002] With the miniaturization of the semiconductor manufacturing process, the degree of integration of semiconductor components is getting higher and higher, and the production of photomasks, which is one of the key technologies of semiconductors, is becoming more and more important. [0003] The quality of the photomask directly affects the quality of subsequent semiconductor devices, which ultimately leads to a reduction in the yield of semiconductor manufacturing. Therefore, a variety of micro-repair techniques have been developed to repair the errors of the mask pattern, so as to reduce the need for re-making the mask, reduce the cost of the mask, and improve the quality of subsequent semiconductor devices. [0004] The photomask manufacturing process is shown in Figure 1. Usually, a layer of chrome film is...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G03F1/00G03F1/72
Inventor 李正强
Owner SEMICON MFG INT (SHANGHAI) CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products