Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Electric test method for thermal expansion coefficient of surface finished polysilicon thin film

A polysilicon film, thermal expansion coefficient technology, applied in the direction of material thermal expansion coefficient, measuring device, material analysis by electromagnetic means, etc., can solve the problem of not meeting the requirements of polysilicon film thermal expansion coefficient online test, complex test structure and other problems

Inactive Publication Date: 2008-08-20
SOUTHEAST UNIV
View PDF0 Cites 21 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, there are many test structures and methods at home and abroad for measuring the thermal expansion coefficient of thin films. Many unknown parameters need to be predicted, and none of these test structures can meet the requirements for online testing of the thermal expansion coefficient of polysilicon thin films

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Electric test method for thermal expansion coefficient of surface finished polysilicon thin film
  • Electric test method for thermal expansion coefficient of surface finished polysilicon thin film
  • Electric test method for thermal expansion coefficient of surface finished polysilicon thin film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0026] exist figure 1 Among them, the anchor region 3 fixes the two ends of the double-terminal fixed beam 1 and at the same time insulates the double-terminal fixed beam 1 from the polysilicon substrate 2 . The first step is to apply a voltage between the double-terminal fixed support beam 1 and the polysilicon substrate 2, and measure the pull-in voltage value V when pull-in occurs. PI0 In the second step, after the double-ended fixed beam 1 returns to the initial state, a constant current is passed through the double-ended fixed beam 1, and the change curve of the voltage at both ends of the double-ended fixed beam 1 is recorded with an oscilloscope. After the double-ended fixed-support beam 1 is heated and finally reaches the thermal steady state, the pull-in voltage V when it pulls in is measured PI1 . The thermal stress value σ generated in the double-end fixed beam 1 after current heating is obtained according to the change of the two pull-in voltages before and after...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A method for electrically testing the thermal expansion coefficient of the film which is processed with polysilicon on the surface is presented basing on the suction phenomenon of the double-end clamped beam (1), the heat stress value generated in the double-end clamped beam (1) which is heated by the current according to the variation of the two suction voltage before and after the heating of the double-end clamped beam (1); and according to the variation curve of electric voltage in two ends of the double-end clamped-end beam (1) in the heating process recorded by the oscillograph, the variation value of the temperature on the heated double-end clamped beam is obtained; and at last according to the obtained heat stress value and the variation value of the temperature on the double-end clamped beam (1) the thermal expansion coefficient of the polysilicon film can be calculated with the relational expression.

Description

technical field [0001] The invention relates to a test method capable of extracting the coefficient of thermal expansion of a surface-processed polysilicon film on-line through electrical measurement, and belongs to the technical field of micro-electro-mechanical systems (MEMS). Background technique [0002] Polysilicon thin films are widely used in MEMS devices and integrated circuits, and are important components of micromechanical devices. Among the various parameters of the film, the coefficient of thermal expansion has a great influence on the performance of the device. At present, there are many test structures and methods at home and abroad for measuring the thermal expansion coefficient of thin films. Many unknown parameters need to be predicted, and none of these test structures can meet the requirements for on-line testing of the thermal expansion coefficient of polysilicon thin films. Therefore, it is necessary to design a test structure and a test method that c...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G01N25/16G01N27/00
Inventor 黄庆安胡冬梅李伟华
Owner SOUTHEAST UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products