75results about How to "Simple test structure" patented technology

A method for electrically testing the thermal expansion coefficient of the film which is processed with polysilicon on the surface is presented basing on the suction phenomenon of the double-end clamped beam (1), the heat stress value generated in the double-end clamped beam (1) which is heated by the current according to the variation of the two suction voltage before and after the heating of the double-end clamped beam (1); and according to the variation curve of electric voltage in two ends of the double-end clamped-end beam (1) in the heating process recorded by the oscillograph, the variation value of the temperature on the heated double-end clamped beam is obtained; and at last according to the obtained heat stress value and the variation value of the temperature on the double-end clamped beam (1) the thermal expansion coefficient of the polysilicon film can be calculated with the relational expression.

The invention requests and protects a frequency response test device and method of an all-in-one photoelectric device. The frequency response test device comprises a laser, a frequency-shift heterodyne interference module, a to-be-measured detector and a spectral analysis module, wherein the frequency-shift heterodyne interference module comprises a to-be-measured photoelectric modulator and a frequency shifter which are respectively placed in an Mach-Zehnder arm and a lower Mach-Zehnder arm of an interference module, the laser, the frequency-shift heterodyne interference module and the to-be-measured photoelectric detector are sequentially and optically connected, a microwave signal source is electrically connected with an input electrode end of the to-be-measured photoelectric modulator,and an output end of the to-be-measured photoelectric modulator is electrically connected with the spectral analysis module. A power ratio of a corresponding constituent is obtained by the spectral analysis module under the condition that the microwave signal source is driven by two different output voltages under the same working frequency, frequency response test of the to-be-measured photoelectric modulator is achieved, the frequency response of the to-be-measured photoelectric modulator is further inversely calculated, and automatic calibration test of the frequency response is finally achieved.

The invention discloses an automatic testing system for the dynamic performance of a laser seeker for a terminal guided missile. The automatic testing system comprises a real-time emulation computer,the laser seeker, a five-axis turntable, a laser target simulator and a laser program controller. The invention further discloses an automatic testing method for the dynamic performance of the laser seeker for the terminal guided missile. The automatic testing method includes the steps that the real-time emulation computer runs a test item, the relative motion position of the laser seeker and thelaser target simulator is calculated, turntable information is sent to a control cabinet, and program control information is sent to the laser program controller; a control cabinet drives a three-axisemulation turntable body and a two-axis target turntable body to rotate; the laser program controller is used for generating a laser signal; the laser seeker receives and tracks the laser signal, andgenerated seeker tracking information is sent back to the real-time emulation computer; and the real-time emulation computer displays and stores testing data. The whole testing system is real-time and can be used for testing the delay characteristic, the tracking characteristic and other dynamic performance relevant to time of the laser seeker.

The invention is the online detecting structure and method of polysilicon film residue deformation. The detecting structure comprises the first curved girder, the second curved girder, the third curved girder, the primary pressure welding block, the second pressure welding block, the third pressure welding block and the fourth pressure welding block. The three polysilicon curved girders parallel with each other; the contactors are at the two sides of the central point of the girders and the space between the contactors is equal. The two ends of the first curved girder separately connect the primary and the forth pressure welding blocks; the two ends of the second girder separately connect the second and the forth pressure welding blocks; the two ends of the third girder connect the third and the forth pressure welding blocks. The invention has fast detecting speed and low requirement for the detected equipment.

The invention discloses a test structure of micro-machining residual stress of a deflection capacitive surface. The test structure comprises a substrate, two lower electrode plates, an upper electrode plate, a left beam, a right beam and two anchoring zone. The lower electrode plates are deposited on the upper surface of the substrate, and the two anchoring zones are arranged on the substrate. The upper electrode plate is arranged above the lower electrode plates in a suspended mode, and the left beam and the right beam are identical and located on the two side of the horizontal central axis L of the upper electrode plate respectively, wherein the distance between the left beam and the central axis L is equal to that between the right beam and the central axis L. The right side of the left beam is connected with the left side of the upper electrode plate, and the left side of the left beam is fixed on the side face of one anchoring zone. The left side of the right beam is connected with the right side of the upper electrode plate, and the right side of the right beam is fixed on the side face of the other anchoring zone. The upper electrode plate, the left beam and the right beam are located in the same plane. The test structure is simple and easy to process, and in addition, test equipment is simple and high in precision. The measuring precision can be improved by increasing the area of the upper electrode plate and the area of the lower electrode plates in the test structure, and in addition, with the method for rotating the upper electrode plate in the test structure, a larger capacitance variation can be more easily obtained compared with a horizontally-moving method.

The invention relates to an on-line detection system and method for LED (light emitting diode) light guide light distribution quality of an automobile daytime running lamp. A discharge station, a test station and a taking station are sequentially connected from front to rear, a tray tool is moved to a set station under the control of a computer to be fixed, the test station is a closed light-tight box, an LED light source module is located on the front end surface of a light pipe by a front locating cylinder in the test station, and the light emitted by the LED light source is coupled to the front end surface of the light pipe and is transmitted to the terminal surface along the light pipe; and at the same time, a light path terminal module is located at the terminal surface of the light pipe by a rear locating cylinder, light is reflected to the light pipe, a picture sensor above the tray tool collects data and transmits to the computer, and the computer comprehensively measures and judges the light distribution quality of the LED light guide from light intensity, illuminance homogeneity and colorimetric parameters, so that on-line detection is objectively, effectively and rapidly realized, and the work efficiency of the system is improved. The system has higher intellectualization and reliability, and the working continuity and stability of the system are improved.

The invention provides a shifting register, an array substrate and a display panel. The shifting register comprises multiple stages of cascade shifting registering circuits, wherein each stage of shifting registering circuit comprises a testing circuit, one end of the testing circuit is connected to a second level end in a coupled mode, the second level end outputs a high level when the shifting register is in a testing mode, and therefore the testing circuit charges the main output end. The array substrate comprises a drive circuit which is composed of the shifting register. The display panel comprises the array substrate and a color-film substrate which is opposite to the array substrate. The shifting register enables all scanning lines of the display panel to be provided with the high level simultaneously, so that direct-current pure-color image detection can be conducted on the display panel, and a traditional liquid crystal cell test is realized. Therefore, a fault caused by an array process and a fault caused by a cell process can be distinguished. In addition, a testing structure is simple, the area of an original shifting register is hardly increased and the manufacturing cost is saved.

The invention relates to a test structure and test method of a time dependent dielectric breakdown (TDDB). The test structure includes a test unit, a resistor array unit and a control unit, wherein the test unit is above the resistor array unit and a metal medium layer is arranged between the test unit and the resistor array unit. The resistor array unit and the control unit are serially connected and then arranged in parallel with the test unit between a first connection end and a second connection end. Through application of different voltages between the first connection end and the second connection end, the control unit controls the stress state at work or non-work measurement state of the resistor array unit and through the two kinds of states, effects of joule heat of the resistor array unit on the electric breakdown performance of the metal medium layer are evaluated and the effects of the joule heat of the resistors on the reliability of the metal medium layer in a real integrated circuit are simulated authentically. The test structure and test method solve a defect that TDDB performance, caused by a joule heat effect, cannot be evaluated in the prior art and improve the detection capability of the performance and yield of a device.

The invention discloses a structure for testing the micro-beam breaking strength based on a longitudinal comb-tooth-type capacitor. A bidirectional comb-tooth structure is composed of a bar-shaped anchor region and comb teeth connected to two side surfaces of the anchor region, wherein one row of comb teeth is connected to outer side surfaces of vertical edges of self-seal type rectangular structures, tail ends of two transverse edges vertical to the vertical edges are connected to side surfaces of respective anchor regions; the two self-seal type rectangular structures with the comb teeth are symmetrically distributed at the left side and the right side of the bidirectional comb-tooth structure, comb-tooth ends are alternatively opposite to comb teeth of the bidirectional comb-tooth structure, wherein the comb teeth of the self-seal type rectangular structures are movable teeth, the comb teeth of the bidirectional comb-tooth structure are fixed teeth; one end of a to-be-tested micro beam is connected to the middle of the inner side surface of the vertical edge of one self-seal type rectangular structure, the other end of the to-be-tested micro beam is fixed on the side surface of one anchor region, and the other self-seal type rectangular structure without the to-be-tested micro beam is of a reference structure; the self-seal type rectangular structures, the to-be-tested micro beam and the comb teeth are all positioned on the same plane, and are suspended above a substrate in parallel. The structure is high in sensitivity and convenient and feasible.

The invention discloses a structure for testing the Young modulus of a top silicon layer of a silicon-on-insulator. The structure comprises a substrate formed by a silicon substrate in the silicon-on-insulator, wherein a first insulating region, a second insulating region, a third insulating region, and a fourth insulating region are arranged on the substrate and are formed by insulating layers in the silicon-on-insulator; a first anchor region, a detection electrode, a second anchor region, an exciting electrode which are formed by the top silicon layer in the silicon-on-insulator are respectively arranged on the first insulating region; and a resonance beam formed by a top silicon beam in the silicon-on-insulator is arranged between the detection electrode and the exciting electrode, one end of the resonance beam is connected with the first anchor region, the other end of the resonance beam is connected with the second anchor region, and the resonance beam is arranged above the substrate and is excited by the exciting electrode to generate an in-plane transverse resonance. According to the structure, the accuracy of testing on the Young modulus of the top silicon layer of the silicon-on-insulator can be improved.

The invention relates to a passive intermodulation testing device which comprises a passive intermodulation tester and a first transmission line, wherein the passive intermodulation tester is connected with one end of a line of equipment to be tested through a first transmission line, and the other end of the line of the equipment to be tested is connected with a load. The passive intermodulationtester transmits at least two carrier signals and outputs the at least two carrier signals to the equipment to be tested through the first transmission line, and the passive intermodulation tester receives passive intermodulation signals returned by the equipment to be tested through the first transmission line. That is, the equipment to be tested is placed between the passive intermodulation tester and the load, and the passive intermodulation tester is connected with the equipment to be tested through the first transmission line. After the carrier signals are absorbed by the load, the residual intermodulation interference signals can be fed back to the passive intermodulation tester through the first transmission line. The test is convenient, the test structure is simple, and signal forwarding does not need to be carried out through a tedious device. Rapid and stable transmission of signals can be ensured, and fast and stable passive intermodulation testing can be realized.

The invention relates to a mining high-low voltage reactive power and harmonic compensation device based on a cancellation method, and belongs to the technical field of electrical test equipment. Themining high-low voltage reactive power and harmonic wave compensation device based on a cancellation method includes a high voltage bus, a bus transformer, an electric energy quality controller, a harmonic transformer T2, a harmonic transformer T3, a harmonic transformer T4, a reactive power generator and a harmonic generator, wherein the low voltage side of the bus transformer is connected with the electric energy quality controller through a reactor I; the electric energy quality controller is connected with the harmonic transformer T2 through a reactor II; the high voltage side of the harmonic transformer T2 is connected with the high voltage bus; the low voltage side of the harmonic transformer T2 is also connected with one end of a reactor III and one end of a reactor IV; the other end of the reactor III and one end of the reactor IV are respectively connected to the reactive power generator and the harmonic generator; and the harmonic transformer T3 and the harmonic transformer T4 are respectively connected with a low voltage test product and a high voltage test product through a voltage adapter and a high voltage adapter. The mining high-low voltage reactive power and harmonic compensation device based on a cancellation method can effectively simplify the test structure, can improve the test efficiency and can reduce the cost.

The invention provides a test system of high power frequency conversion electric drive equipment. The system comprises a test load feedback unit, a tested motor which is in a transmission connection with the test load feedback unit, a tested frequency converter which is connected to the tested motor, and a test driving feedback unit which is connected to the output end of the tested frequency converter, wherein the power end of the test load feedback unit is connected to a direct current bus, and the power end of the test driving feedback unit is connected to the direct current bus. Through the above structure, the adaptability and transform ability of the system can be effectively improved, the whole can accurately test high voltage frequency conversion drive equipment, a test structure is effectively simplified, frequent disassembly and assembly are not needed, the test efficiency is improved, and the labor intensity and cost are reduced.

The invention discloses a metal material plastic yield strength detection device, which relates to the technical field of material detection. According to the technical scheme, the device comprises adetection platform, two supporting stand columns, a horizontal cross beam, a servo drive motor, an adjusting telescopic rod, an impact pressure head component, an acceleration sensor, a hard alloy ball and a to-be-tested sample fixing area, wherein the to-be-tested sample fixing area is located between the two supporting stand columns, and the to-be-tested sample fixing area is perpendicular to the central axis of the hard alloy ball; a PLC and a power supply device are arranged on the side wall of the detection platform; a touch operation display screen is detachably connected to the side wall of the supporting stand column. A switch control mechanism is arranged on the top surface of the detection platform; and the servo drive motor, the acceleration sensor and the touch operation display screen are connected with the PLC. According to the device, the yield strength of the metal material is detected by adopting a dynamic load indentation method, the yield strength of the metal material can be rapidly detected, the detection efficiency is high, and the detection result is accurate; meanwhile, the device is simple in test structure and convenient to operate.

The invention discloses a heat resistance testing method for a linear voltage stabilizer. The heat resistance testing method comprises the steps that a chip junction temperature testing structure of the linear voltage stabilizer is constructed, and the chip junction temperature of the linear voltage stabilizer is tested through an oil bath method; then a junction-to-case heat resistance testing structure of the linear voltage stabilizer is constructed for testing the junction-to-case heat resistance of the linear voltage stabilizer, and the case temperature and the power applied by a device are determined; and finally, the junction-to-case heat resistance of the linear voltage stabilizer is calculated. The heat resistance testing method is easy and convenient to operate, concise in structure, easy to implement and low in cost, the forward voltage drop of a diode is adopted to represent the chip junction temperature, and testing precision is high.