Structure for testing Young modulus of top silicon layer of silicon-on-insulator

An on-insulating substrate, Young's modulus technology, applied in the application of repetitive force/pulsation force to test the strength of materials, coupling of optical waveguides, components of TV systems, etc. Excessive corrosion of the oxide layer, occupying a large area, etc., to achieve the effect of simple signal loading and measurement, simple fundamental frequency method, and stable and accurate calculation method

Inactive Publication Date: 2013-08-14
SOUTHEAST UNIV
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Problems solved by technology

Due to the large thickness of the top layer of silicon on the insulating substrate (SOI), these structures occupy a large area, and there is a problem of excessive corrosion when the oxide layer under the top layer of silicon material is released, which has a great impact on the effective size of the out-of-plane motion structure

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  • Structure for testing Young modulus of top silicon layer of silicon-on-insulator
  • Structure for testing Young modulus of top silicon layer of silicon-on-insulator
  • Structure for testing Young modulus of top silicon layer of silicon-on-insulator

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Embodiment Construction

[0016] A test structure of the Young's modulus of the silicon material top silicon layer on an insulating substrate, comprising: a substrate 100 formed by a silicon substrate in the silicon material on an insulating substrate, on which an insulating The first insulating region 101, the second insulating region 102, the third insulating region 103 and the fourth insulating region 104 formed by the insulating layer in the silicon material on the substrate, in the first insulating region 101, the second insulating region 102, the fourth insulating region The first anchor region 106, the detection electrode 107, the second anchor region 108 and the excitation electrode 109 formed by the top silicon layer in the silicon material on the insulating substrate are respectively provided on the third insulating region 103 and the fourth insulating region 104. Between the detection electrode 107 and the excitation electrode 109 is provided a resonant beam 105 formed by the top silicon laye...

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Abstract

The invention discloses a structure for testing the Young modulus of a top silicon layer of a silicon-on-insulator. The structure comprises a substrate formed by a silicon substrate in the silicon-on-insulator, wherein a first insulating region, a second insulating region, a third insulating region, and a fourth insulating region are arranged on the substrate and are formed by insulating layers in the silicon-on-insulator; a first anchor region, a detection electrode, a second anchor region, an exciting electrode which are formed by the top silicon layer in the silicon-on-insulator are respectively arranged on the first insulating region; and a resonance beam formed by a top silicon beam in the silicon-on-insulator is arranged between the detection electrode and the exciting electrode, one end of the resonance beam is connected with the first anchor region, the other end of the resonance beam is connected with the second anchor region, and the resonance beam is arranged above the substrate and is excited by the exciting electrode to generate an in-plane transverse resonance. According to the structure, the accuracy of testing on the Young modulus of the top silicon layer of the silicon-on-insulator can be improved.

Description

technical field [0001] The invention belongs to the technical field of microelectromechanical system (MEMS) material parameter testing, and relates to a testing structure for Young's modulus of silicon material (SOI) top layer silicon on an insulating substrate, in particular to a silicon material top layer on an insulating substrate. Test structure for Young's modulus of silicon layer. Background technique [0002] Resonant beams are widely used as a common resonant sensor, which can effectively convert mechanical vibration and electrical signals into each other. The silicon material on the insulating substrate is the basic material for the manufacture of micro-electromechanical system devices. The resonant beam formed by the silicon material on the insulating substrate is used for electromechanical sensing is a commonly used structure and sensing method in MEMS. [0003] Young's modulus is an important parameter to measure the vibration characteristics of the resonant bea...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N3/38B81B7/02
Inventor 孙超周再发黄庆安李伟华
Owner SOUTHEAST UNIV
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