Test structure of micro-machining residual stress of deflection capacitive surface

Abstract

The invention discloses a test structure of micro-machining residual stress of a deflection capacitive surface. The test structure comprises a substrate, two lower electrode plates, an upper electrode plate, a left beam, a right beam and two anchoring zone. The lower electrode plates are deposited on the upper surface of the substrate, and the two anchoring zones are arranged on the substrate. The upper electrode plate is arranged above the lower electrode plates in a suspended mode, and the left beam and the right beam are identical and located on the two side of the horizontal central axis L of the upper electrode plate respectively, wherein the distance between the left beam and the central axis L is equal to that between the right beam and the central axis L. The right side of the left beam is connected with the left side of the upper electrode plate, and the left side of the left beam is fixed on the side face of one anchoring zone. The left side of the right beam is connected with the right side of the upper electrode plate, and the right side of the right beam is fixed on the side face of the other anchoring zone. The upper electrode plate, the left beam and the right beam are located in the same plane. The test structure is simple and easy to process, and in addition, test equipment is simple and high in precision. The measuring precision can be improved by increasing the area of the upper electrode plate and the area of the lower electrode plates in the test structure, and in addition, with the method for rotating the upper electrode plate in the test structure, a larger capacitance variation can be more easily obtained compared with a horizontally-moving method.

Description

technical field [0001] The invention relates to the field of surface micromachining residual stress testing, in particular to a deflection capacitive surface micromachining residual stress testing structure. Background technique [0002] MEMS is the abbreviation of Micro-Electro-Mechanical Systems (Micro-Electro-Mechanical Systems). MEMS organically combines electronic technology with mechanical properties, and can simultaneously realize physical, chemical, biological and other functions through the movement of the suspended structure. There are many processing methods for MEMS, and the surface micromachining process is one of the commonly used methods. The micromechanical structure is produced by continuously growing functional layers, structural layers, and sacrificial layers on silicon wafers, and selective etching is used to remove the structural layer. sacrificial layer, resulting in microstructures suspended near the substrate surface. [0003] However, residual stre...

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Problems solved by technology

[0003] However, residual stress will inevitably be generated during surface micromachining, and excessive residual stress will cause cracking or deformation of the film structure

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