Semiconductor device and method for producing the same
A semiconductor and device technology, applied in the field of semiconductor devices, can solve problems such as the impact assessment of the reliability of conductive packaging substrates, and achieve the effect of preventing ESD damage
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0033] 1A and 1B are schematic diagrams showing the configuration of the semiconductor device of the present embodiment. FIG. 1A is a cross-sectional view showing the configuration of a semiconductor device 100 . FIG. 1B is a schematic diagram illustrating the connection between the silicon interposer 110 and the first semiconductor chip 122 within the semiconductor device 100 . FIG. 3 is a cross-sectional view showing the configuration of the silicon interposer 110 in more detail.
[0034]The semiconductor device 100 is a multi-chip module formed by packaging a plurality of semiconductor devices in one package, and as shown in FIG. Start stacking the stack structure. The silicon interposer 110 is formed of a silicon substrate 101 formed of a semiconductor (silicon). In the configuration of the semiconductor device 100, device chips are mounted on the upper and lower surfaces of a silicon interposer 110 serving as a package substrate.
[0035] As shown in FIG. 1B , Vdd, GN...
Embodiment 2
[0097] FIG. 5 is a cross-sectional view showing the structure of the semiconductor of this embodiment.
[0098] The basic structure of the semiconductor shown in FIG. 5 is the same as that of the semiconductor shown in FIG. 1 (Embodiment 1). The difference between the configurations of the semiconductor shown in FIG. 1 and FIG. 5 is that the semiconductor shown in FIG. A penetrating electrode is provided.
[0099] The electrodes 135 provided on the element forming surface 133 of the first semiconductor chip 122 are electrically connected to the through electrodes 117 on the through electrode structure 103 through the bump electrodes 131 .
[0100] The semiconductor device shown in FIG. 5 also has the silicon substrate 101 and the through-electrode 110 of the silicon interposer 110 electrically connected to each other through a wiring 125a (not shown in FIG. 5). Therefore, by using the wiring 125b (not shown in FIG. 5 ), connection is established between the wiring 125a (not ...
Embodiment 3
[0102] FIG. 6 is a cross-sectional view showing the structure of the semiconductor device of the present embodiment.
[0103] The basic configuration of the semiconductor device shown in FIG. 6 is the same as that of the semiconductor device shown in FIG. 1 (Embodiment 1). In the configuration shown in FIG. 6 , the second semiconductor chip 128 and the third semiconductor chip 130 are further stacked on the first semiconductor chip 122 . In the same manner as described above for the first semiconductor chip 122, the second semiconductor chip 128 and the third semiconductor chip 130 are stacked after making their element forming faces upward, and the second semiconductor chip 128 and the third semiconductor chip 130 are laminated. Chip 130 is provided with through electrodes 173 and through electrodes 175 , respectively. Through the bump electrodes 123 , the through electrodes 117 of the silicon interposer 110 are connected to the through electrodes 155 of the first semiconduc...
PUM
| Property | Measurement | Unit |
|---|---|---|
| Thickness | aaaaa | aaaaa |
| Thickness | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
Login to View More - R&D
- Intellectual Property
- Life Sciences
- Materials
- Tech Scout
- Unparalleled Data Quality
- Higher Quality Content
- 60% Fewer Hallucinations
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com