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Etch-resistant disilane and saturated hydrocarbon bridged silicon-containing polymers, method of making the same, and method of using the same

A technology of composition and copolymer, which is applied in the application of radioactive source radiation, photographic process of patterned surface, optomechanical equipment, etc., can solve the problems of limited usability, etc.

Active Publication Date: 2008-11-12
CHEIL IND INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, many such antireflective materials exhibit properties substantially similar to those of photoresists, which limits their usefulness

Method used

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  • Etch-resistant disilane and saturated hydrocarbon bridged silicon-containing polymers, method of making the same, and method of using the same
  • Etch-resistant disilane and saturated hydrocarbon bridged silicon-containing polymers, method of making the same, and method of using the same
  • Etch-resistant disilane and saturated hydrocarbon bridged silicon-containing polymers, method of making the same, and method of using the same

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Embodiment Construction

[0044] The present invention will now be described more fully hereinafter with reference to the accompanying drawings, in which exemplary embodiments of the invention are illustrated. However, this invention may be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art.

[0045] In the drawings, the dimensions of layers and regions may be exaggerated for clarity of illustration. It will also be understood that when a layer or element is referred to as being "on" another layer or substrate, it can be directly on the other layer or substrate, or intervening layers may also be present. Further, it will be understood that when a layer is referred to as being 'under' another layer, it can be directly under, and one or more intervening layers may also be present. I...

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Abstract

The present invention relates to a production and use method of a silicon-containing polymer briging slushing disilane and saturated hydrocarbon. A composition includes a copolymer including a mixture of monomeric units having structures (A), (B), and (C), and one or more of structures (D) or (E), HSiO(3-a) / 2(OH)a (A); SiO(3-b) / 2(OH)b-(CH2)n-SiO(3-c) / 2(OH)c (B); R1SiO(3-d) / 2(OH)d (C); MeSiO(3-e) / 2(OH)e (D); R2SiO(3-f) / 2(OH)f (E), wherein a, b, c, d, e, and f are independently from 0 to 2, n is from 0 to about 10, R1 is a chromophore, and R2 is a hydrophilic group.

Description

technical field [0001] The present invention relates to resistive disilane and saturated hydrocarbon bridged silicon-containing polymers, methods for their preparation and methods for their use. More particularly, the present invention relates to resist disilane and saturated hydrocarbon bridged silicon-containing polymers useful in lithographic fabrication processes, methods for their preparation, and methods for their use. Background technique [0002] The fabrication of devices, such as semiconductor devices, optoelectronic devices, MEMS (microelectromechanical systems) devices, etc., typically uses micromachining operations combined with photolithographic processes. The photolithography process may use light of a predetermined wavelength suitable for forming an image with a desired resolution. Reducing the size of features in a device is often advantageous for various reasons, such as economical savings, performance advantages, reduction in overall device size, and the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08L83/14C08L83/05C09D183/14C09D183/05C08G77/50C08G77/12
CPCY10S430/106C08G77/50C08G77/48G03F7/0752G03F7/091C08G77/38C08G77/44C08G77/04C08G77/06
Inventor 沙赫罗赫·莫塔莱比林相学
Owner CHEIL IND INC