Method of forming a metal oxide layer pattern and method of forming a semiconductor device using the same

Abstract

Provided herein are methods of forming a metal oxide layer pattern on a substrate including providing a preliminary metal oxide layer on a substrate; etching the preliminary metal oxide layer to provide a preliminary metal oxide layer pattern, wherein the line width of the preliminary metal oxide layer pattern gradually increases in a vertically downward direction; and etching the preliminary metal oxide layer pattern to form a metal oxide layer pattern in a manner so as to decrease the line width of a lower portion of the preliminary metal oxide layer. The present invention also provides methods of manufacturing a semiconductor device including forming a metal oxide layer and a first conductive layer on a substrate; etching the metal oxide layer to provide a preliminary metal oxide layer pattern, wherein the line width of the preliminary metal oxide layer pattern gradually increase in a vertically downward direction; etching the first conductive layer to provide a first conductive layer pattern; and etching the preliminary metal oxide layer pattern to provide a metal oxide layer pattern in a manner so as to decrease the line width of a lower portion of the preliminary metal oxide layer pattern.

Description

technical field [0001] Embodiments of the present invention relate to methods of patterning a metal oxide layer on a substrate and methods of fabricating semiconductor devices using the method of patterning a metal oxide layer described herein. Background technique [0002] Semiconductor memory devices may include volatile memory devices and nonvolatile memory devices. In general, volatile memory devices may include dynamic random access memory (DRAM) devices and static random access memory (SRAM) devices. Nonvolatile memory devices may include erasable programmable read only memory (EPROM) devices, electrically erasable programmable read only memory (EEPROM) devices, and flash memory devices. When the power is turned off, the volatile memory device loses the stored data, while the non-volatile memory device can retain the stored data. [0003] Flash memory devices can be further classified into floating gate memory devices and floating trap memory devices. A floating gat...

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Problems solved by technology

Therefore, at least due to the possible conductivity of the residue, current can flow through this ferroelectric layer pattern as a dielectric layer, which reduces the reliability of the FRAM device

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