Semiconductor device

A semiconductor and device technology, applied in the field of semiconductor devices

Active Publication Date: 2008-11-12
SONY CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0038] However, the pixel unit 3 of the 3TR structure without such selection transistors cannot adopt this technology

Method used

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  • Semiconductor device
  • Semiconductor device
  • Semiconductor device

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Embodiment Construction

[0055] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. Hereinafter, an embodiment of a device using a CMOS imaging sensor, which is an example of an X-Y address type solid-state imaging device, will be described. Also, all pixels of the CMOS imaging sensor are composed of NMOS. However, this is only an example. The device is not limited to a MOS type imaging device. All the embodiments described below apply to all physical quantity distribution sensing semiconductor devices in which a plurality of unit components are sensitive to externally input electromagnetic waves such as light and rays and are arranged in a row or in a matrix. Also, it should be noted that in the embodiment according to the present invention, the words "row" and "column" used for the pixel arrangement and the direction of the line represent the horizontal direction and the vertical direction of the matrix, respectively. However,...

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Abstract

A semiconductor apparatus, including a signal collecting unit including a unit assembly, including a charge generation unit for generating a signal charge responding to incident electromagnetic wave; a charge accumulation unit for accumulating signal charge generated by the charge generation unit; a signal generation unit for generating signal according to accumulated signal charges in the charge accumulation unit; and a reset unit for resetting the charge accumulation unit; and a drive control unit for using the control impulse to enable the charge accumulation unit to reach rest level so as to improve charge amount for accumulation in the charge accumulation unit, wherein the control impulse includes a rest impulse for driving the reset unit and the drive control unit works to enable the reset unit to become threshold value voltage drop in a predetermined voltage scale when the reset impulse is efficient.

Description

[0001] This application is a divisional application of the application titled "Semiconductor Device and Control Method and Device for Driving Its Unit Components" (application number: 200410090013.9; filing date: September 10, 2004). technical field [0002] The present invention relates to a semiconductor device in which a plurality of unit modules are provided. Specifically, the present invention relates to a technique for reducing power consumption and improving the dynamic range of a physical quantity distribution sensing semiconductor device such as a solid-state imaging device. For example, in a physical quantity distribution sensing semiconductor device, unit components sensitive to externally input electromagnetic waves such as light and rays, such as unit pixels, are arranged in a matrix, and the physical quantity distribution is converted into electrical signals for readout. Background technique [0003] In various fields, physical quantity distribution sensing sem...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H04N3/15H01L27/146H04N5/335H04N5/355H04N5/369H04N5/374H04N5/378
CPCH04N5/3559H04N5/3745H04N5/378H04N25/59H04N25/76H04N25/77H04N25/75H04N25/57
Inventor 马渕圭司
Owner SONY CORP
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